Items Tagged with 'gallium'

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TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.

Javelin Semiconductor Inc., one of the first companies to bring standard silicon designs to mobile-phone amplifiers, has been acquired by Avago Technologies Ltd. (AVGO).

Richardson RFPD Inc. announced the launch of a new website resource focused exclusively on Gallium Nitride (GaN).

Auriga Microwave announced that Dr. Nick Kingsley will host the "Gallium Nitride: Ready for Radar Primetime" workshop at the 6th annual Military Radar Summit. The workshop, to be held on Monday, February 25, at the Ronald Reagan Building in Washington, DC, is part of the three-day summit event that gathers academics and government and industry executives to discuss the latest military radar developments.

Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.

While microwave and millimeter wave high-power vacuum electron devices (VEDs) remain “below the radar” of many industry observers, the total available market (TAM) for this segment is nearly $1 billion in 2012.

StratEdge Corp., a designer and producer of high performance semiconductor packages for microwave, millimeter-wave, and high speed digital devices, introduces a new family of high power laminate packages at IMS2012 Booth #1625. The LL family of leaded laminate copper-moly-copper (CMC) base packages dissipates heat from high power compound semiconductor devices, such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC).

Raytheon Co. has been awarded an 18-month, $1.8 million contract by the DARPA to develop next-generation GaN devices bonded to diamond substrates.