TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, is releasing new phase shifters, high-power limiters and gallium nitride (GaN) MMIC amplifiers that can improve system performance, increase efficiency and reduce part counts in wide-ranging defense and commercial applications.
TriQuint’s new GaN and gallium arsenide (GaAs) product solutions were released in conjunction with the Defense Manufacturers Conference (DMC) in Orlando, Florida. TriQuint’s three new high-power limiters handle up to 100W and protect sensitive circuits from electrical overload. Their low flat leakage shields low noise amplifiers (LNAs) while low insertion loss maximizes efficiency with reduced noise. The devices are ideal for receive chain (Rx) protection in commercial and defense radars.
TriQuint’s two new phase shifters cover 6 to 18 GHz, including X- and Ku-bands. They deliver wider frequency coverage than competing solutions for reduced part counts. Their 6-bit digital logic assures smooth, continuously variable time delay functionality. They are packaged for easy assembly in radar, electronic warfare (EW) and satellite communications applications.
New GaN amplifiers from TriQuint cover a wide range of applications with greater output power at superior efficiency, which enables smaller systems and reduced part counts. TriQuint’s new die-level amplifier delivers superior broadband power and efficiency; its two new packaged 50W amplifiers support key radar (9 to 10 GHz) and satellite communications (7.9 to 8.4 GHz) frequencies.
TriQuint’s Spatium™ high power amplifiers deliver a highly reliable, efficient alternative to traveling wave tube wave amplifiers (TWTAs) for commercial and defense communications, radar and EW. Spatium dramatically improves broadband RF power and efficiency through patented coaxial spatial combining techniques using gallium arsenide (GaAs) or gallium nitride (GaN) MMIC amplifiers. Spatium supports the need for RF power at high efficiency from hundreds to thousands of watts.
High Power Limiters
|
Part Number |
Frequency (GHz) |
Pin Handling |
Insertion Loss (dB) |
Leakage (dBm) |
Return Loss (dB) |
ECCN |
|
1-6 |
50W |
<0.5 |
<16 |
12 |
EAR99 |
|
|
2-4.5 |
70W |
<0.5 |
<15 |
15 |
EAR99 |
|
|
2-5 |
70W |
<0.5 |
<16 |
15 |
EAR99 |
Phase Shifters
|
Part Number |
Frequency (GHz) |
Bits |
RMS-AE (dB) |
RMS-PE (deg) |
IL (dB) |
Input P1dB |
IIP3 (dBm) |
Vc |
ECCN |
|
6-18 |
6 |
0.45 |
4 |
<10 |
>25 |
>41 |
0 / +5 |
EAR99 |
|
|
6-18 |
6 |
0.55 |
5 |
<12 |
>25 |
>41 |
-5 / 0 |
EAR99 |
GaN Amplifiers
|
Part Number |
Frequency (GHz) |
Psat (W) |
P1dB (dBm) |
LS Gain (dB) |
SS Gain (dB) |
PAE (%) |
Bias (V / mA) |
ECCN |
|
2-6 |
30 |
-- |
22 |
27 |
40 |
28 / 400 |
ITAR |
|
|
7.9-8.4 |
50 |
43 |
25 |
14 |
36 |
24 / 2.24A |
3A001.b.3.b |
|
|
9-10 |
50 |
-- |
-- |
13 |
38 |
24 / 2.4A |
3A001.b.3.b |
Spatium Solutions
|
Part Number |
Frequency (GHz) |
Psat (W) |
Small Signal Gain (dB) |
Power Gain (dB) |
PAE (%) |
Vd (V) |
Prime Power (VAC) |
ECCN |
|
RM022020 |
2-20 |
15 |
45 |
44 |
8 |
– |
90-264 |
3A001.b.4.b |
|
CHPA0618-100 |
6-18 |
100 |
55 |
50 |
12 |
– |
90-264 |
3A001.b.4.b |
|
KA150W-2730 |
27-30 |
150 |
22 |
15 |
28 |
20 |
– |
3A001.b.4.b |
|
KU250W-1416 |
14.4-16 |
250 |
25 |
22 |
20 |
30 |
– |
3A001.b.4.b |
|
KU400W-1316 |
13.75-16 |
400 |
25 |
22 |
20 |
30 |
– |
3A001.b.4.b |
Contact a local TriQuint sales representative or visit TriQuint on the web for more information about new defense and commercial high-performance solutions. TriQuint GaN innovation includes MMIC amplifiers, switches, die-level and packaged transistors; register for product updates and TriQuint’s newsletter.