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ARTICLES

GaN Transistors for L-Band Commercial and Military Applications

Cree SiC MOSFETs revolutionize HEV/EV power converters

Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency.  According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.


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Cree releases two new GaN HEMTs for L-Band radar systems

RFIC

Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.  Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz. 


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Cree RF technology helps capture Hollywood aerial action sequence

Cree’s GaN RF technology played a critical behind-the-scenes role in the upcoming action film, “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger. The film features aerial stunt sequences captured using a low-latency HD camera and transmitter and Array Wireless’ S-Band linear power amplifier, which employs Cree’s world-class GaN HEMT semiconductors to meet the stringent linearity requirements for wide bandwidth HD digital transmission. 


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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50 V Telecom GaN Transistors

Cree and Eta Devices to demo the world’s most efficient PA (70%+) for mobile base stations at the MWC 2013

Cree Inc. and Eta Devices Inc. will demonstrate the world’s most efficient reported power amplifier for mobile base stations at the 2013 Mobile World Congress, February 24-28 in Barcelona, Spain.


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Cree releases 50 V GaN HEMT technology to reduce cellular energy needs

Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.


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Cree and Array Wireless provide HD broadcast equipment for NBC's Sunday Night Football

Cree Inc. and Array Wireless help bring the clarity of high-definition (HD) video transmission to Sunday Night Football (SNF) on NBC. The HD NFL games are broadcast using wireless video systems from Array Wireless that employ Cree’s advanced GaN RF components. Array Wireless counts on Cree world-class RF GaN technology to create high efficiency, low distortion, robust power amplifiers that are essential for high-definition video transmission.


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50 and 100 W, X-Band Fully Matched Transistors

Introduction to a 50 and 100 W, X-Band GaN transistor family for high power applications


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