Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.  Featuring the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems. 

Based on Cree’s 50 V 0.4µ GaN on SiC foundry process, Cree’s new GaN HEMTs for L-Band radar systems provide engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility. 

The 250 W CGHV14250 features 330W typical output power, 18 dB power gain, and 77% typical drain efficiency.  The 500W CGHV14500 features 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency.  Both the 250 W and 500 W GaN HEMTs feature 0.3 dB pulsed amplitude droop. 

To view a video demonstration of the CGHV14500, please visit:  To access datasheets for the new 250 W and 500 W GaN HEMTs, please visit: and  Large-scale models are available at Agilent ADS and AWR Microwave, and stock will be available at Digikey by September. 

For additional information, please visit or contact Sarah Miller, Marketing and Export, Cree RF Components, at or 919-407-5302.  To schedule a source interview with a representative from Cree RF, please contact me using the information listed below.