Richardson RFPD, Inc. now offers full design support and availability for two new high performance GaN RF power transistors from Guerrilla RF: the GRF0020 and GRF0030. These GaN-on-SiC HEMTs deliver exceptional efficiency and bandwidth for demanding RF applications.

Unmatched Performance for RF Systems

• GRF0020
  • Frequency Range: DC to 7.0 GHz
  • Output Power (P3dB): 30 W at 50 V; 19 W at 28 V
  • Saturated Gain: 13.5 dB
  • Drain Efficiency: 51 percent
  • Saturated Output Power: 45.1 dBm
• GRF0030
  • Frequency Range: DC to 6.0 GHz
  • Output Power (P3dB): 50 W at 50 V; 25 W at 28 V
  • Saturated Gain: 12.7 dB
  • Drain Efficiency: 60 percent
  • Saturated Output Power: 46.6 dBm

Both devices operate on 50 V supply rails and support 28 V operation for flexibility. They are housed in industry-standard 3 mm x 3 mm QFN-16 surface-mount packages and are also available as bare die: GRF0020D and GRF0030D.

Applications

• Cellular Infrastructure
• Radar Systems
• Wireless Communications
• Test & Measurement Equipment

Why GaN-on-SiC?

GaN-on-SiC technology offers superior power density, thermal performance and efficiency compared to traditional LDMOS or GaAs solutions, making these devices ideal for next-generation RF designs.