Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM). The new high performance transistors are gold metalized and use state-of-the-art wafer fabrication processes. They provide high gain, efficiency and ruggedness over a wide bandwidth, which helps enable size, weight and power dissipation (SWaP) improvements.

Three of the new GaN on SiC transistors are internally-matched, providing ease of implementation and improved efficiency. The other two new HEMTs (the MAGX-000025-15000 and MAGX-000035-01000P) are unmatched, offering the flexibility of operation outside standard frequency bands. All of the new devices offer GaN's high gain, power density and efficiency, making them ideal for pulsed power avionics and radar applications. Key features of the new GaN on SiC HEMTs from MACOM include:

The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the New L-Band GaN on SiC RF Transistors webpage. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales