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Keysight Technologies, Inc. announced that it has joined the Intel Foundry Services (IFS) Accelerator Electronic Design Automation (EDA) Alliance program.
Finwave Semiconductor, Inc. announced they have joined MITRE Engenuity’s Semiconductor Alliance. Finwave has answered the group’s call for industry participation to help establish a U.S.-wide approach to protect IP in advanced microelectronics R&D, manufacturing and supply chain resilience.
Cadence Design Systems, Inc and United Microelectronics Corporation (UMC) announced that customers are adopting their certified mmWave reference flow and experiencing exceptional results.
Dr. Jihad M Boura launched Beyond Silicon Solutions, a new fabless semiconductor start-up that hosts the strategic pool of IPG-Photonics chip design principals who can deliver engineering services.
Yole Intelligence has developed a new dedicated report to provide context for the CS markets in RF, power, photonics and display applications, including forecasts, in its new Status of Compound Semiconductors Industry 2022 report.
Sumitomo Electric Industries, Ltd. has developed a GaN transistor that uses N-polar GaN and, for the gate insulating layer, the first hafnium (Hf)-based, highly heat-resistant, high dielectric material, setting its sights on the post-5G era.
IQE announced the signing of a multi-year agreement with Advanced Wireless Semiconductor Company (AWSC), for the supply of epiwafers for wireless applications.
SweGaN AB announced it has added Henrik Tölander as chief operating officer to support the company’s growth strategy to serve explosive global market demand.
Synopsys, Inc., Ansys and Keysight Technologies, Inc. announced the availability of their new mmWave RF design flow for TSMC's 16 nm FinFET Compact technology.
Wayne Johnson, SVP of Sales and Business Development at IQE, discusses epi wafer market trends and material technologies with Pat Hindle, Media Director at Microwave Journal.
Electromagnetic (EM) simulation is an indispensable tool for characterizing the on-chip passive structures found in radio-frequency integrated circuit (RFIC) designs. However, when it comes to full-chip analysis, the diversity of structure geometries and scale pose a significant challenge for any single EM simulation technology. Successful characterization of an RFIC generally requires three different types of simulators: parasitic extraction, planar EM, and full (arbitrary) 3D solvers.
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.
This application note looks at VCO fundamentals, for typical oscillator designs through tuning sensitivity characteristics. Examples of a Colpitts and Clapp circuit are presented.
Dual-polarity supplies are commonly needed to operate
electronics such as op amps, drivers, or sensors,
but there is rarely a dual-polarity supply available at
the point of load. The LTCî3260 is an inverting charge
pump (inductorless) DC/DC converter with dual low
noise LDO regulators that can produce positive and
negative supplies from a single wide input (4.5V to
32V) power source. It can switch between high efficiency
Burst Modeî operation and low noise constant
frequency mode, making it attractive for both portable
and noise-sensitive applications.
The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.
Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.
A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical
layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with
inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by
the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.
There are several options for the architecture of the transmit signal path. The factors that impact transmit signal elements are introduced, followed by a discussion of the different architectures. Figure 1 shows a direct conversion architecture for an initial point of reference only. Section 6 of 3GPP TS 25.105 describes the transmit signal requirements used throughout this discussion.
The next frequency frontier is the millimeter wave (mm-wave) band, which occupies the 30 GHz to 300 GHz spectrum (wavelengths from 10 to 1 mm). Emerging applications now span radio astronomy, communication, imaging, space research, and homeland security, and are starting to seriously populate this vast spectrum resourse. Market forecast and limited available spectrum suggest that attractive growth is just over the horizon so explorers are naturally migrating to stake their claim in this next frontier.