As detailed in a new report from Mobile Experts, the mmWave market for RF front-end components will grow to more than $1 billion by 2024, driven by smartphones, hotspots and fixed customer premises equipment.
GLOBALFOUNDRIES (GF) and Soitec announced the two companies have signed multiple long-term supply agreements for 300 mm silicon-on-insulator (SOI) wafers. The agreements assure GF will have sufficient high volume wafer supply to meet the demand for its RF SOI, fully-depleted SOI (FD-SOI) and silicon photonics process platforms.
Infineon Technologies AG and Cypress Semiconductor Corp. announced that the companies have signed a definitive agreement under which Infineon will acquire Cypress for US$23.85 per share in cash, corresponding to an enterprise value of €9 billion.
NXP Semiconductors N.V. announced that its wholly owned subsidiary has entered into a definitive agreement with Marvell, under which NXP will acquire Marvell’s Wireless Connectivity portfolio in an all-cash, asset transaction valued at $1.76 billion.
Agency for Science, Technology and Research's (A*STAR) Institute of Microelectronics (IME) and Soitec (Euronext Paris) announce the launch of a joint program to develop and integrate a new layer transfer process within advanced wafer level multi-chip packaging techniques.
MACOM Technology Solutions and STMicroelectronics (ST) announced ST will expand 150 mm RF GaN on Si production capacity for power amplifiers supporting the initial build of 5G base stations. MACOM will invest approximately $23 million in the expansion, which is scheduled to complete this year.
GLOBALFOUNDRIES (GF) announced that the company’s mobile-optimized 8SW RF SOI technology platform has delivered more than a billion dollars of client design win revenue since its launch in September 2017.
Electromagnetic (EM) simulation is an indispensable tool for characterizing the on-chip passive structures found in radio-frequency integrated circuit (RFIC) designs. However, when it comes to full-chip analysis, the diversity of structure geometries and scale pose a significant challenge for any single EM simulation technology. Successful characterization of an RFIC generally requires three different types of simulators: parasitic extraction, planar EM, and full (arbitrary) 3D solvers.
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.
Dual-polarity supplies are commonly needed to operate
electronics such as op amps, drivers, or sensors,
but there is rarely a dual-polarity supply available at
the point of load. The LTCÃÂ®3260 is an inverting charge
pump (inductorless) DC/DC converter with dual low
noise LDO regulators that can produce positive and
negative supplies from a single wide input (4.5V to
32V) power source. It can switch between high efficiency
Burst ModeÃÂ® operation and low noise constant
frequency mode, making it attractive for both portable
and noise-sensitive applications.
Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.
A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical
layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with
inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by
the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.
There are several options for the architecture of the transmit signal path. The factors that impact transmit signal elements are introduced, followed by a discussion of the different architectures. Figure 1 shows a direct conversion architecture for an initial point of reference only. Section 6 of 3GPP TS 25.105 describes the transmit signal requirements used throughout this discussion.
The next frequency frontier is the millimeter wave (mm-wave) band, which occupies the 30 GHz to 300 GHz spectrum (wavelengths from 10 to 1 mm). Emerging applications now span radio astronomy, communication, imaging, space research, and homeland security, and are starting to seriously populate this vast spectrum resourse. Market forecast and limited available spectrum suggest that attractive growth is just over the horizon so explorers are naturally migrating to stake their claim in this next frontier.