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IGaN Achieves Low-Conduction Loss with 150 mm GaN-on-Si Epiwafer for RF Applications

Findings pave the way for commercialisation of RF Epistack on 200 m substrates to be commercially available end Q1 2021
October 26, 2020
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IGaN’s technology has the unique advantage of achieving very low conduction loss meeting the industry standards for GaN HEMT on Si for RF applications. Recently processed IGaN's 150 mm GaN on Si HEMT wafers have achieved a conduction loss of 0.15 dB at room temperature and 0.23 dB at high temperature for an operating frequency of 10 GHz.


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NXP GaN Fab

NXP Advances 5G with New Gallium Nitride Fab in Arizona

High-volume manufacturing facility is the most advanced GaN fab for RF in the United States
September 29, 2020
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NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the grand opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the United States. The new internal factory combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.


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DOCUMENTS AND FILES

Integrating EM Simulation Technologies within an RFIC Design Flow

July 13, 2016
Electromagnetic (EM) simulation is an indispensable tool for characterizing the on-chip passive structures found in radio-frequency integrated circuit (RFIC) designs. However, when it comes to full-chip analysis, the diversity of structure geometries and scale pose a significant challenge for any single EM simulation technology. Successful characterization of an RFIC generally requires three different types of simulators: parasitic extraction, planar EM, and full (arbitrary) 3D solvers.
richardson

Pulsed GaN Power Transistors

April 17, 2013

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.

Pulsed RF Operation of Microsemi GaN RF Power Transistors

April 16, 2013

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.

Understanding VCO Concepts

January 16, 2013
This application note looks at VCO fundamentals, for typical oscillator designs through tuning sensitivity characteristics. Examples of a Colpitts and Clapp circuit are presented.

High Voltage Inverting Charge Pump Produces Low Noise

December 15, 2012

Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTC®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst Mode® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.

Biasing Constant Current MMICs

December 7, 2012

The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.

New GaN FETs, Amplifiers and Switches Offer System Engineers a Way to Reduce RF Board Space and System Prime Power

September 17, 2012
Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

August 13, 2012
A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.

Multicarrier TD-SCMA Feasibility

August 13, 2012
There are several options for the architecture of the transmit signal path. The factors that impact transmit signal elements are introduced, followed by a discussion of the different architectures. Figure 1 shows a direct conversion architecture for an initial point of reference only. Section 6 of 3GPP TS 25.105 describes the transmit signal requirements used throughout this discussion.

Harmonic Mixer Primer: The Gateway to the Millimeter Wave Frontier is Harmonic Mixer Technology

July 17, 2012
The next frequency frontier is the millimeter wave (mm-wave) band, which occupies the 30 GHz to 300 GHz spectrum (wavelengths from 10 to 1 mm). Emerging applications now span radio astronomy, communication, imaging, space research, and homeland security, and are starting to seriously populate this vast spectrum resourse. Market forecast and limited available spectrum suggest that attractive growth is just over the horizon so explorers are naturally migrating to stake their claim in this next frontier.
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