Semiconductors / Integrated Circuits

yole_6-2-20

GaAs: A Technical Breakthrough Pushed by Photonics

Yole deeply investigates GaAs wafer and epiwafer technologies and related industries, and proposes its new technology and market analysis report: GaAs Wafer and Epiwafer Market: RF, Photonics, LED, Display and PV Applications 2020, providing a deep understanding of the GaAs industry and define GaAs wafer and epiwafer market dynamics.


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New ‘buffer-free’ Concept for GaN-on-SiC High Electron Mobility Transistors Reveals Competitive Efficiency

In a new joint study with the Chalmers University of Technology Department of Microtechnology and Nanoscience, SweGaN explored QuanFINE® epitaxial wafer performance, based on GaN HEMT technology at Chalmers, Gothenburg, Sweden. The study revealed that the new concept using a total GaN layer thickness of 250 nm does not compromise the material quality and device performance.

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GaN featr

Driven by Military Applications and 5G Telecom Infrastructure, GaN RF Continues Growing

Extracted from: GaN RF market: applications, players, technology, and substrates 2020 report, Yole Développement

“In the past few years, RF applications have received a boost from the implementation of GaN technology,” asserts Ezgi Dogmus, PhD. Technology & Market Analyst at Yole Développement (Yole). “The main GaN RF market drivers remain telecom and defense applications.” The total GaN RF market will increase from US$740 million to more than US$2 billion by 2025, with a CAGR of 12%.


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