Semiconductors / Integrated Circuits


Mitsubishi Electric Develops World's First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate

Mitsubishi Electric Corp. announced that in collaboration with the Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of AIST, it has developed a GaN-HEMT in a multi-cell structure (multiple transistors cells arranged in parallel) bonded directly to a single-crystal diamond heat-dissipating substrate with high thermal conductivity.

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