Mitsubishi Electric Corporation is expanding its line of GaN HEMTs to add devices with 70 and 100 W output power at Ku-Band, developed for satellite earth stations. Samples will be available beginning October 1, with full availability by January 1, 2017.
Skyworks introduced a family of GPIO-controlled, high performance RF cellular switches for LTE and GSM applications. The SKY13581-676LF (SP2T), SKY13582-676LF (SP3T) and SKY13626-685LF (SP4T) are for LTE, while the SKY13597-684LF (SP4T) is for GSM.
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will release the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — to market at European Microwave Week 2016, which will take place in London, October 3–7.
To address the need for radio systems that can adapt to changing environments on the fly and that can be easily reconfigured once in the field, BAE Systems has developed the MATRICS (Microwave Array Technology for Reconfigurable Integrated Circuits) chip.
ON Semiconductor Corp. and Fairchild Semiconductor International Inc. jointly announced that ON Semiconductor successfully completed its previously announced $2.4 billion cash acquisition of Fairchild.
Dr. James (Jim) Komiak will be presenting the keynote for the amplifier track at the EDI CON USA conference, taking place 20-22 September in Boston. We caught up with Jim to learn more about his background and perspective on the state of MMIC design.
MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products and components, today introduced two wideband amplifiers, the MAAM-011229, a Low Noise Amplifier, and the MAAM-011206, a Darlington amplifier, to its growing portfolio of high-performance MMICs.
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems.