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RFIC Channel

RFIC, MMIC, semiconductor channel

ARTICLES

Murata to acquire Peregrine Semiconductor

Peregrine Semiconductor Corp.
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 Murata Electronics North America, Inc., and Peregrine Semiconductor Corp. (Peregrine) announced that they have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata, for $12.50 per share in cash, or a total transaction value of $471 million ($465 million excluding Murata's existing holding). 


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Agile Microwave announces new line of linear broadband power amplifiers

Agile Microwave Technology Inc.
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 Agile Microwave Technology Inc., a product innovator in RF and Microwave component and sub-system market is pleased to announce the first of a series of Broadband Power amplifiers with >50W P1 dB minimum power over the full frequency range.  


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Custom MMIC's new GaN power amp offers high power and excellent efficiency

Custom MMIC
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 Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD216, a new 14 to18 GHz GaN power amplifier in die form, to their expanding product line. 


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RFMW announces 1W FEM for 900MHz ISM designs

RFMW Ltd.
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 RFMW, Ltd. announces design and sales support for the RFFM6903, a 1W transmit power Front End Module (FEM) for applications in the frequency range of 868 to 960 MHz. 


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Richardson RFPD introduces industry's first DC–40 GHz, 6-bit digital attenuator

Richardson RFPD
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 Richardson RFPD Inc. announced the availability and full design support capabilities for a new wideband, 6-bit digital attenuator from M/A-COM Technology Solutions


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New Cree GaN HEMT die available via distribution

Cree Inc.
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 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 


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GaN LNAs from RFMW cover 2 to 12 GHz

RFIC
RFMW Ltd.
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 RFMW, Ltd. announces design and sales support for a pair of GaN low noise amplifiers targeted at military and commercial radar applications as well as SatCom, point-to-point radio and WiMax applications. 


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RFMW's 50 W power limiter protects 20 to 2,000 MHz

RFMW Ltd.
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RFMW, Ltd. announces design and sales support for Peregrine Semiconductor’s new, adjustable power limiter providing protection for up to 50 W pulsed RF input. 


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Peregrine Semiconductor upgrades high-isolation, multi-throw switches

RFIC
Peregrine Semiconductor Corp.
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 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42442 and the PE42452 high-isolation, multi-throw switches.  


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RFMW Ltd. to support new 50 ohm absorptive switch from TriQuint

RFMW
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 RFMW Ltd. announces design and sales support for a 50 ohm absorptive switch from TriQuint. The TQC0015 internal terminations can handle a maximum CW power of up to 2 W.  


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