Keysight Technologies, Inc. introduced the N7614B Signal Studio for Power Amplifier (PA) Test; an all-in-one, general-purpose test suite designed to help engineers improve PA efficiency through support for crest factor reduction (CFR), envelope tracking (ET) and digital pre-distortion (DPD) technologies.
NI (formerly AWR Corp.) has launched the NI AWR Design Environment™ E-Learning Portal to give current users of NI AWR software the ability to learn more about the powerful tools, technologies and applications of the software as their time and interest allows.
Isola Corp. is pleased to announce a free Impedance and Power-Handling Calculator that predicts the design attributes for microstrips and striplines based on the design’s target impedance and dielectric properties of the company’s RF, microwave and millimeter-wave laminate materials.
Agilent Technologies Inc. announced that the Modelithics COMPLETE library of RF and microwave component model libraries is available free of charge for six months to Genesys 2014 users new to Modelithics.
NI (formerly AWR Corporation) has released V11.01 of the NI AWR Design Environment™ with enhancements to Analyst™ 3D finite element method (FEM) EM simulation engine that cuts simulation times by as much as 70 percent over previous versions.
Miniaturization of consumer products, aerospace and defense systems, medical devices, and LED arrays has spawned the development of a technology known as the multi-chip module (MCM), which combines multiple integrated circuits (ICs), semiconductors dies, and other discrete components within a unifying substrate for use as a single component. This two-part white paper outlines the steps for implementing an integrated design flow within the AWR Microwave OfficeÂ® design environment for MMICs, MCMs and modules.Â Design flow considerations for both a GaAs PHEMT power amplifier design as well as for an MCM microwave monolithic integrated circuit (MMIC) design on a microwave laminate module are discussed.Â
The evolution of integrated circuit technology demands that designers in this field adapt to ever-changing manufacturing techniques driven by performance, cost, benefit, and risk demands. Today’s power amplifier (PA) designer working in solid state technologies must navigate a plethora of available processes, including gallium arsenide (GaAs), gallium nitride (GaN) and silicon carbide (SiC) pseudomorphic high electron mobility transistor (PHEMT), radio-frequency complementary metal oxide semiconductor (RF CMOS), and GaAs or silicon germanium (SiGe) heterojunction bipolar transistor (HBT), to name just a few. Similarly, different design challenges demand different amplifier classes and/or topologies like Class AB, Darlingtons, switch-mode PAs, and digital predistortion.
Traditional modeling methods such as rules of thumb and spreadsheet calculations (Friis equations) give limited insight on the full performance of an RF link in next-generation wireless products. This white paper highlights the advantages of using specialized RF system simulation software to accurately predict critical metrics for wireless RF links.
Optimizing a PA design for one parameter invariably requires sacrifi cing the
performance of another. This delicate balance between performance and
effi ciency is not the only conundrum, because designers of 4G PAs must also
contend with demands for greater instantaneous bandwidth. As a result,
designers of next-generation PAs are relying on simulation more than ever
before, and their tasks include frequency domain simulation, time domain
simulation, and now circuit envelope simulation.