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ARTICLES

Raytheon to Advance Gallium Nitride Technology

The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Co. a $14.9 million contract to further enhance its process for producing gallium nitride-based semiconductors. The new agreement aims to increase the performance, yield and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits and circulator components.


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Raytheon unveils cyber and electromagnetic battle management

Raytheon Co. showcased Cyber and Electromagnetic Battle Management, a new battle management tool, at Cyber Quest, a U.S. Army event that informs cybersecurity requirements and priorities. CEMBM integrates cyber and electromagnetic spectrum awareness capabilities into the Electronic Warfare Program Management Tool, an Army program of record since 2014.


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Mini-Circuits receives 4-Star Supplier Excellence Award from Raytheon IDS

Raytheon Integrated Defense Systems has presented Mini-Circuits with its 4-Star Supplier Award for outstanding quality and service for the sixth consecutive year. The award was presented to Mini-Circuits at Raytheon’s Operational Excellence Supplier Conference recently held in Danvers, Massachusetts.


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Raytheon to display groundbreaking new Patriot radar at US Army trade show

The world's newest missile defense radar is gearing up for a road trip. Raytheon Co. funded, developed and built a new Gallium Nitride (GaN) powered Active Electronically Scanned Array main antenna for the combat-proven Patriot Air and Missile Defense System. Raytheon will exhibit its prototype Patriot full-scale, GaN-based AESA radar in the company's booth at the Association of the United States Army's Global Force Symposium and Exposition in Huntsville, Ala., March 15-17.


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