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ARTICLES

GaAs Power Amplifier: TGA2621-SM

TriQuint_Quorvo_TGA2621-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new GaAs power amplifier from TriQuint / Qorvo. The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It operates from 16 to 18.5 GHz and typically provides greater than 1 W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain.


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Digital Step Attenuators: PE43711, PE43712 & PE43713

Peregrinet_Glitchless_DSAs_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for three new digital step attenuators from Peregrine Semiconductor. The PE43711, PE43712 and PE43713 are 50 Ω, HaRP™ technology-enhanced, 7-bit RF DSAs that support applications from 9 kHz to 6 GHz. They feature glitch-less attenuation state transitions and support 1.8 V control voltage and an extended operating temperature range to +105°C.


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Ultra-Miniature OCXOs: IQOV-162 Series

IQD_Ultra-miniature_OCXOs_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new series of ultra-miniature oven controlled crystal oscillators (OCXOs) from IQD Frequency Products Ltd. The IQOV-162 Series of OCXOs is offered in 14.4 mm x 9.5 mm x 6.5 mm SMD metal can packages. Standard frequencies include 10, 12.8, 19.2, 20, and 38.88 MHz, with either an HCMOS or sinewave output. OCXOs also feature phase noise performance better than -150 dBc/Hz (at 1 kHz.)


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Two GaN RF Power Transistors: TGF2929-FL and TGF2929-FS

Quorvo_TGF2929-FL_TGF2929-FS_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two new GaN RF power transistors from TriQuint / Qorvo. The TGF2929-FL and TGF2929-FS are 100 W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Three Quasi-MMIC GaN on SiC HEMTs

Three GaN on SiC HEMTsRichardson RFPD Inc. announced the availability of three Quasi-MMIC GaN on SiC HEMTs from United Monolithic Semiconductors. The CHZ015A-QEG  is a 15 W, GaN HEMT that offers broadband solutions for a variety of RF L-band power applications, the CHZ050A-SEA  is a 60 W, GaN HEMT that offers broadband solutions for a variety of RF C-band applications and the CHZ180A-SEB  is a 200 W, wideband GaN HEMT that offers broadband solutions for a variety of RF L-band applications.


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RF SPDT Switch: PE423422

Peregrine_PE423422_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new RF single-pole double-throw (SPDT) switch from Peregrine Semiconductor Corporation. The PE423422 delivers excellent linearity and harmonics performance. It is designed to cover a wide range of automotive wireless applications from 100 to 6000 MHz, including automotive infotainment and traffic safety applications.


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GaN RF Transistor: TGF3021-SM

Quorvo_TGF3021-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo. The 30 W (P3 dB) TGF3021-SM operates from 0.03 to 4.0 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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RF LDMOS Wideband Integrated Power Amplifier: AFIC10275N

Freescale_ AFIC10275N _PR_Photo_NLRichardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS integrated power amplifier from Freescale. The AFIC10275N is the industry’s first RF power integrated circuitcovering the 978-1090 MHz band. It integrates two amplification stages in a plastic package, delivering 250 W with 31 dB of gain and 64% drain efficiency. The device also embeds temperature and RF sensing capabilities, reducing the need for external components.


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UltraCMOS® SPDT RF Ka-Band Flip-Chip Switch: PE42524

Peregrinet_PE42524_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new UltraCMOS switch from Peregrine Semiconductor Corporation. The PE42524 is a HaRP™ technology-enhanced reflective wideband SPDT RF switch die that operates from 10 MHz to 40 GHz and delivers high isolation performance, excellent linearity and low insertion loss. At 30 GHz, the PE42524 exhibits 17 dB active port return loss, 47 dB isolation and 2.2 dB insertion loss.


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RF Input-Matched Transistor: TGF3015-SM

TriQuint_Quorvo_TGF3015-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo. The 10 W (P3dB), 50 Ω input-matched TGF3015-SM operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 mm x 3 mm package.


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