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ARTICLES

Continuous Wave SPDT Reflective Switch: MPS2R10-606

Microsemi_MPS2R10-606_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a 100 W continuous wave SPDT reflective switch from Microsemi Corporation. The MPS2R10-606 SPDT series-shunt PIN diode switch operates from 50 to 1000 MHz, with 500 ns switching speed. At 100 MHz, it typically offers 60 dB isolation, with 0.1 dB insertion loss and 28 dB return loss. At 500 MHz, it typically offers 55 dB isolation, 0.2 dB insertion loss, and 15 dB return loss.


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Hyperabrupt Varactor Diode: MAVR-011020-1411

MAVR-011020-1411Richardson RFPD Inc. announced the availability and full design support capabilities for a new gallium arsenide flip-chip hyperabrupt varactor diode from M/A-COM Technology Solutions. The high-frequency MAVR-011020-1411 offers 0.025 pF total capacitance at 1 MHz/15V, a Q factor of 3000, and constant gamma for linear tuning. The device is suitable for point-to-point, electronic scanning antenna arrays, electronic warfare (EW), and other Aerospace & Defense applications.


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Balanced 3-Stage GaAs Amplifier: MAAP-011199

MAAP-011199Richardson RFPD Inc. announced the availability and full design support capabilities for a new power amplifier from M/A-COM Technology Solutions. The MAAP-011199 is a balanced 3-stage gallium arsenide (GaAs) pHEMT MMIC power amplifier that operates from 80 to 100 GHz and typically provides +24 dBm of saturated output power. The power amplifier’s balanced architecture results in excellent input and output match to 50Ω across the entire 80 to 100 GHz frequency band.


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Two X-band GaN Power Amplifiers: TGA2622-SM and TGA2624-SM

Qorvo_TGA2622-SM_TGA2624-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two X-band GaN power amplifiers from Qorvo. The TGA2622-SM and TGA2624-SM operate from 9 to 10 GHz and are offered in 7 mm x 7 mm air-cavity, laminate-based QFN packages. For both devices, the RF ports are internally DC blocked and matched to 50 ohms, enabling simple system integration.


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Selection Availability of Devices for RF Energy Applications

Anaren_Bridges_the_gap_PR_PhotoRichardson RFPD Inc. announced the availability of a selection of Anaren devices for RF energy applications. RF energy refers to the emerging technology that uses an all solid-state semiconductor chain to generate RF power for heating and processing. Magnetron tubes are the primary technology employed for these applications. The benefits of solid-state RF energy over magnetron tubes include a lower-voltage drive, smaller form factor, and greatly-enhanced reliability.


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Richardson RFPD announces participation at IMS2016

Live demos, new products, and drone giveaway featured at the Richardson RFPD Booth #1918

Richardson RFPD Inc. announced its participation in the 2016 IEEE International Microwave Symposium (IMS), to be held in San Francisco, Calif., May 24-26, 2016. The IMS2016 is the largest RF/microwave commercial exhibition in the world, with more than 600 exhibiting companies. It is held in conjunction with the IEEE RFIC and ARFTG conferences.


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Richardson RFPD announces live demos of new DFE and SDR solutions at IMS2016

Richardson RFPD has collaborated with Analog Devices (ADI) and New Edge Signal Solutions to develop digital front-end (DFE) radio solutions, including new wideband (6 to 24 GHz) SiGe up/down converters (ADRF6780, ADRF6880) and transceivers. The ADRF6780 and ADRF6880 enable simpler system architecture, especially for customers seeking to cover multiple bands from 6 to 24 GHz, by replacing narrow-band devices, using fewer components, offering higher system reliability, and using less board space.


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Selection of SDI Video and Optoelectronics Products

MACOM_HPA_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a selection of SDI video and optoelectronics products from M/A-COM Technology Solutions. MACOM’s SDI video products span a complete signal chain for an SDI link, including multi-rate equalizer and cable driver solutions for emerging ultra-high-definition (UHD) TV standards and legacy 3G, HD and SD.


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LDMOS Transistor: MRF8VP13350NR3

NXP_MRF8VP13350NR3_PR_Photo (2)Richardson RFPD Inc. announced the availability and full design support capabilities for a LDMOS transistor from NXP Semiconductors. The MRF8VP13350NR3 is a 350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700 MHz to 1300 MHz frequency range. It is capable of 350W CW or pulse power in narrowband operation. The device is internally input matched for ease of use, and it can be used single-ended or in a push-pull configuration.


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Richardson RFPD at APEC 2016

Richardson RFPD Inc. announces its attendance and participation at the 2016 Applied Power Electronics Conference and Exposition (APEC). APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, from manufacturers, designers and suppliers, to individuals involved in marketing and sales. 


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