advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

ARTICLES

Family of DOCSIS 3.1 Active Components

MACOM_DOCSIS_PR_PhotoRichardson RFPD Inc. introduced a family of DOCSIS 3.1 active components from M/A-COM Technology Solutions. The new family of amplifiers cover upstream and downstream bands and complement MACOM's recently-introduced portfolio of DOCSIS 3.1-compliant passive components. The amplifiers are designed for head-end, node, system and line access equipment requiring broad bandwidth, high output power and low distortion.


Read More

Power Doubler Amplifier: ACA2431

Anadigics_aca2431_PR_PhotoThe ACA2431 is a highly linear, high output power integrated RF amplifier designed for CATV headends and HFC distribution systems. The IC consists of two parallel amplifiers that are optimized for exceptionally low distortion, high output power, and high crash point. A GaN output stage is incorporated to minimize the operating (bias) current and provides high gain over the 50 to 1218 MHz CATV downstream band.


Read More

Discrete GaN on SiC HEMT: T2G4003532

Quorvo_T2G4003532-FL_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a discrete GaN on SiC HEMT from TriQuint / Qorvo. The 30 W (P3dB) T2G4003532 operates from DC to 3.5 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


Read More

Expanded Range of HPA Devices

MACOM_HPA products_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for the portfolio of high-performance analog products from M/A-COM Technology Solutions. MACOM’s HPA portfolio has grown significantly and include products such as crosspoint switches, clock and data recovery modules (CDRs), transimpedance amplifiers (TIAs), optical drivers, equalizers, reclockers and VoIP processors.


Read More

DC to 50 GHz Amplifier: MAAM-011109-DIE

Generic-MACOM-Image-DIE-PartRichardson RFPD Inc. announced the availability and full design support capabilities for a wideband amplifier from M/A-COM Technology Solutions. The MAAM-011109-DIE is an easy-to-use, wideband amplifier that operates from DC to 50 GHz and features 15 dB of gain, +21 dBm P1dB (+15 dBm at 40 GHz), with 22 dB of reverse isolation, 15 dB return loss, and OIP3 of +29 dBm at 5V/190mA with VG1 = -0.4V.


Read More

GaAs Power Amplifier: TGA2621-SM

TriQuint_Quorvo_TGA2621-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new GaAs power amplifier from TriQuint / Qorvo. The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It operates from 16 to 18.5 GHz and typically provides greater than 1 W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain.


Read More

Digital Step Attenuators: PE43711, PE43712 & PE43713

Peregrinet_Glitchless_DSAs_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for three new digital step attenuators from Peregrine Semiconductor. The PE43711, PE43712 and PE43713 are 50 Ω, HaRP™ technology-enhanced, 7-bit RF DSAs that support applications from 9 kHz to 6 GHz. They feature glitch-less attenuation state transitions and support 1.8 V control voltage and an extended operating temperature range to +105°C.


Read More

Ultra-Miniature OCXOs: IQOV-162 Series

IQD_Ultra-miniature_OCXOs_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new series of ultra-miniature oven controlled crystal oscillators (OCXOs) from IQD Frequency Products Ltd. The IQOV-162 Series of OCXOs is offered in 14.4 mm x 9.5 mm x 6.5 mm SMD metal can packages. Standard frequencies include 10, 12.8, 19.2, 20, and 38.88 MHz, with either an HCMOS or sinewave output. OCXOs also feature phase noise performance better than -150 dBc/Hz (at 1 kHz.)


Read More

Two GaN RF Power Transistors: TGF2929-FL and TGF2929-FS

Quorvo_TGF2929-FL_TGF2929-FS_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two new GaN RF power transistors from TriQuint / Qorvo. The TGF2929-FL and TGF2929-FS are 100 W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


Read More

Three Quasi-MMIC GaN on SiC HEMTs

Three GaN on SiC HEMTsRichardson RFPD Inc. announced the availability of three Quasi-MMIC GaN on SiC HEMTs from United Monolithic Semiconductors. The CHZ015A-QEG  is a 15 W, GaN HEMT that offers broadband solutions for a variety of RF L-band power applications, the CHZ050A-SEA  is a 60 W, GaN HEMT that offers broadband solutions for a variety of RF C-band applications and the CHZ180A-SEB  is a 200 W, wideband GaN HEMT that offers broadband solutions for a variety of RF L-band applications.


Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement