Indium Corp.'s Dr. Ning-Cheng Lee, vice president of technology, will teach a professional development course at the Electronic Components and Technology Conference (ECTC) May 27-30 in Lake Buena Vista, Florida.
Remtec Inc., the leading manufacturer of substrates and packages using plated copper on thick film (PCTF) metallization, has adapted its gold-tin plating technology on metallized ceramics to include a newly developed technique of selectively applying AuSn deposits for interconnecting RF and microwave electronic components, lead frames and other miniature parts on high frequency PC boards.
Attendees of the 2014 International Microwave Symposium (IEEE-IMS) Exhibition will have the opportunity to see printed circuit boards made live and in-person by visiting LPKF Laser & Electronics in booth #1108. LPKF has announced that they will be debuting the first ever hybrid milling/laser prototyping system, the ProtoMat D104. Also at the show will be a UV laser prototyping system, the ProtoLaser U3. The show will be hosted in Tampa, FL., June 3-5 at the Tampa Convention Center.
Rogers Corp. held a ribbon-cutting ceremony to dedicate the company’s new Innovation Center in Burlington, Massachusetts on March 25. More than 125 government officials, community leaders, technology company representatives and other guests were on hand to celebrate and tour the Center, which is located within Northeastern University’s George J. Kostas Research Institute for Homeland Security.
SemiGen Inc. (www.semigen.net), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, provides high-quality, automated PCB assembly for high-mix, low- to medium-volume printed circuit boards.
Agilent Technologies announced the recent installation of an Agilent 5600LS atomic force microscope with scanning microwave microscopy at the Cambridge Graphene Centre (CGC), in the UK.
Soitec has reached high-volume manufacturing of its new Enhanced Signal Integrity™ (eSI) substrates, enabling cost-effective and high-performance RF devices. The eSI products are said to be the first ‘trap-rich’ type of material in full production.
NXP Semiconductors has introduced the first transistors in a 1.1 mm by 1 mm by 0.37 mm low-profile discrete flat no-leads (DFN) package that boost current capabilities up to 3.2 A.