Ampleon announced the opening of its RF Energy Competence Center in Hefei, PRC. The company is recognized as a leader in the RF energy market and continues to invest in the emerging use of this technology. While RF energy covers a broad range of applications (domestic and professional cooking, heating and drying, ignition and lighting), the new competence center's current focus is on solid-state cooking.
Ampleon announced the modular M2 RF Energy reference system to replace magnetrons in the industrial heating market. This technology replacement is driven by the need for a longer service lifetime of the RF generators, to reduce operating costs and minimize the downtime of heating systems.
Ampleon announced a 1900 W LDMOS power transistor for applications in the 10 to 500 MHz frequency range. Delivering 1900 W pulsed or 1700 W CW output power, the device is capable of operating with a VSWR up to 65:1.
Ampleon announced a new family of integrated Doherty power amplifier devices aimed at LTE Advanced Pro / 4.5G massive-MIMO base station applications and capable of being used as power amplifiers in small cells.
RFMW Ltd. and Ampleon announce the extension of their distribution relationship. Ampleon is the RF Power Business Unit that was recently spun-off from NXP Semiconductors. Under the agreement, RFMW will extend their franchise agreement to EMEA including Israel for the entire RF Power business activity, including sales and support of the complete line-up of Ampleon’s LDMOS and GaN RF Power products.
Ampleon announced the availability of a new package platform that will be rolled out across the entire LDMOS and GaN product portfolio. Over a dozen variants of the SOT502 and SOT539 platforms are in development.
Ampleon announced the availability of the BLCU188XRS, a 1400W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package. Able to withstand extremely load mismatches, up to a VSWR > 65:1, this Gen6 HV 50 V LDMOS device has a 30 percent better thermal resistance (R,th) compared to a traditional air cavity ceramic packaged transistor, and combined with its high efficiency, requires less stringent cooling requirements.