Richardson RFPD Inc. announced the availability and full design support capabilities for range of RF solutions for aerospace and defense applications from Freescale Semiconductor, Inc. The portfolio encompasses a range of high-power solutions that support a wide range of needs for military applications, including avionics, HF through L- and S-band radar, communications, missile guidance, electronic warfare, and identification, friend or foe (IFF).
Richardson RFPD Inc. announced the availability and full design support capabilities for a new series of ultra-miniature oven controlled crystal oscillators (OCXOs) from IQD Frequency Products Ltd. The IQOV-162 Series of OCXOs is offered in 14.4 mm x 9.5 mm x 6.5 mm SMD metal can packages. Standard frequencies include 10, 12.8, 19.2, 20, and 38.88 MHz, with either an HCMOS or sinewave output. OCXOs also feature phase noise performance better than -150 dBc/Hz (at 1 kHz.)
Richardson RFPD Inc. announced the availability and full design support capabilities for two new GaN RF power transistors from TriQuint / Qorvo. The TGF2929-FL and TGF2929-FS are 100 W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
Richardson RFPD Inc. announced the availability of three Quasi-MMIC GaN on SiC HEMTs from United Monolithic Semiconductors. The CHZ015A-QEG is a 15 W, GaN HEMT that offers broadband solutions for a variety of RF L-band power applications, the CHZ050A-SEA is a 60 W, GaN HEMT that offers broadband solutions for a variety of RF C-band applications and the CHZ180A-SEB is a 200 W, wideband GaN HEMT that offers broadband solutions for a variety of RF L-band applications.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new RF single-pole double-throw (SPDT) switch from Peregrine Semiconductor Corporation. The PE423422 delivers excellent linearity and harmonics performance. It is designed to cover a wide range of automotive wireless applications from 100 to 6000 MHz, including automotive infotainment and traffic safety applications.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo. The 30 W (P3 dB) TGF3021-SM operates from 0.03 to 4.0 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS integrated power amplifier from Freescale. The AFIC10275N is the industry’s first RF power integrated circuitcovering the 978-1090 MHz band. It integrates two amplification stages in a plastic package, delivering 250 W with 31 dB of gain and 64% drain efficiency. The device also embeds temperature and RF sensing capabilities, reducing the need for external components.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new UltraCMOS switch from Peregrine Semiconductor Corporation. The PE42524 is a HaRP™ technology-enhanced reflective wideband SPDT RF switch die that operates from 10 MHz to 40 GHz and delivers high isolation performance, excellent linearity and low insertion loss. At 30 GHz, the PE42524 exhibits 17 dB active port return loss, 47 dB isolation and 2.2 dB insertion loss.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo. The 10 W (P3dB), 50 Ω input-matched TGF3015-SM operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 mm x 3 mm package.
Richardson RFPD Inc. announced the availability and full design support capabilities for a series of temperature-variable chip attenuators from Aeroflex/Inmet. The Powerfilm™ TCAF N05 Series operates from DC to 12 GHz and is designed to vary -.005 dB/dB/ºC to compensate for temperature-induced system gain variation without requiring a bias or control voltage. These attenuators consist of laser-trimmed thick film resistor elements on an alumina ceramic substrate with a protective paint layer.