Articles by Richardson RFPD Inc.

1700 V SiC MOSFET: C2M1000170J

Wolfspeed_ C2M1000170_PR_PhotoRichardson RFPD Inc. announced the availability for a 1700 V SiC MOSFET. The C2M1000170J features high blocking voltage with low RDS (on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability.


Read More

6 W Ka-Band Power Amplifier: MAAP-011140-DIE

MAAP-011140-DIERichardson RFPD Inc. announced the availability and full design support capabilities for a power amplifier from M/A-COM Technology Solutions. The MAAP-011140-DIE is a 4-stage, 6 W power amplifier in bare die form that is fabricated using a GaAs pHEMT device process featuring full passivation for enhanced reliability. The power amplifier operates from 27.5 to 30.0 GHz and provides 24 dB of linear gain, 6 W saturated output power, and 23% power added efficiency.


Read More

Dual Differential SPDT Switch: PE42920

Peregrine_PE42920_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new dual differential, single pole double throw RF switch. The PE42920 DDSPDT RF switch is a broadband (10 kHz to 6 GHz) and low loss device that enables the switching of two independent differential signals. This device consumes less power than active differential switches. It has high isolation between same-channel inputs, as well as opposite active channels.


Read More

75 Ω pHEMT Dual RF Amplifier: TAT7472A1F

Qorvo_TAT7472A1F_PR_PhotoThe TAT7472A1F is a 75 Ω RF amplifier designed for CATV use but capable of operation up to 1218 MHz, making it suitable for DOCSIS 3.1. It contains two separate amplifiers for push-pull applications and is fabricated using 6-inch GaAs pHEMT technology. Each amplifier contains on-chip active biasing, with bias current set points that are adjustable with a single resistor from the input to ground. Typical supply voltage for the TAT7472A1F is +5 V.


Read More

Dual, Analog-To-Digital Converter: AD9684

ADI_AD9684BBPZ-500_PRPhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a dual, 14-bit, 500 MSPS analog-to-digital converter from Analog Devices Inc. The AD9684 includes an on-chip buffer and a sample-and-hold circuit designed for low power, small size, and ease of use. The new ADC is specifically designed for sampling wide bandwidth analog signals. It is optimized for wide input bandwidth, a high sampling rate, excellent linearity, and low power in a small package.


Read More

GaN Power Amplifier: TGA2239-CP

Qorvo_TGA2239-CP_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new GaN power amplifier from TriQuint / Qorvo. The TGA2239-CP is a 3-stage, 35 W power amplifier operating over the 13.4 to 15.5 GHz band. Fabricated on Qorvo’s production 0.15 µm GaN on SiC technology, this high performance amplifier offers greater than 30 dB small-signal gain with 34% PAE, allowing a system designer to achieve superior performance levels in a cost efficient manner.


Read More

Gallium Nitride Bias Controller/Sequencer Module: MABC-001000-DP000L

MACOM_MABC_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a gallium nitride bias controller/sequencer module from M/A-COM Technology Solutions. The MABC-001000-DP000L provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). The bias controller module offers protection and dynamic control of all MACOM high-power transistors, including its GaN portfolio.


Read More

Two GaN on SiC RF Input-Matched Transistors: TGF3020-SM / TGF3021-SM

Qorvo_TGF3020-21-SM_PR_Photo (2)Richardson RFPD Inc. announced the availability and full design support capabilities for two GaN transistors from Qorvo. The 5W TGF3020-SM and 30 W TGF3021-SM input-matched transistors enable high linear gain and power efficiency in low-cost, space-saving surface-mount plastic QFN packages. The integrated input matching network enables wideband gain and power performance, and the output can be matched on-board to optimize power and efficiency for any region within the band.


Read More

Platinum Series of Terminations and Attenuators

Radiall_Platinum_Series_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new series of terminations and attenuators from Radiall. The Platinum Series is part of Radiall’s global Test & Measurement offering and features easy integration for communication matrices, test benches and laboratories where high RF performance and reliability are essential. The product range includes terminations and attenuators up to 40 GHz, with a variety of commonly-used connectors


Read More