Optimized to potentially lower system costs due to fewer amplifier line-ups and lower thermal management costs
Richardson RFPD Inc. announced the availability and full design support capabilities for two new GaN RF power transistors from TriQuint / Qorvo.
The TGF2929-FL and TGF2929-FS are 100 W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The new HEMTs are suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications.
- Frequency: DC to 3.5 GHz
- Output power (P3dB): 107W @ 3.5 GHz
- Linear Gain: >14 dB @ 3.5 GHz
- Typical PAE: >50% @ 3.5 GHz
- Operating voltage: 28V
- Low thermal resistance, ceramic flanged (TGF2929-FL) or flangeless (TGF2929-FS) package
Evaluation boards are available upon request.