Quorvo_TGF2929-FL_TGF2929-FS_PR_PhotoOptimized to potentially lower system costs due to fewer amplifier line-ups and lower thermal management costs

Richardson RFPD Inc. announced the availability and full design support capabilities for two new GaN RF power transistors from TriQuint / Qorvo.

The TGF2929-FL and TGF2929-FS are 100 W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The new HEMTs are suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications.

According to TriQuint / Qorvo, additional key features of the TGF2929-FL and TGF2929-FS include:

  • Frequency: DC to 3.5 GHz
  • Output power (P3dB): 107W @ 3.5 GHz
  • Linear Gain: >14 dB @ 3.5 GHz
  • Typical PAE: >50% @ 3.5 GHz
  • Operating voltage: 28V
  • Low thermal resistance, ceramic flanged (TGF2929-FL) or flangeless (TGF2929-FS) package

Evaluation boards are available upon request.

To find more information or to purchase these products today online, please visit the TGF2929-FL and TGF2929-FS  web pages. The devices are also available by calling 1-800-737-6937.