Ampleon has extended its portfolio of GaN RF power transistors based on a 0.5 µm HEMT process technology. Comprising 10, 30, 50 and 100 W devices, over 10 transistors are available that are suitable for multiple applications such as drivers up to C-Band, through to 100 W and 200 W push-pull packages for use in final stages up to S-Band. Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices is suitable for use in a broad range of applications that need to meet specific requirements of size, weight and power (SWaP).
Senior Director of Marketing, Ampleon Multi Market Business Unit, Thijs Tullemans said, “We are investing heavily in both LDMOS and GaN technology, as we see GaN gaining momentum beyond the A&D market, into areas such as cellular infrastructure. Indeed we see significant growth opportunities in both market segments, but with respect to GaN, the technology offers us the opportunity to broaden our product offering to our customers, and we will be releasing more in-depth news on the GaN front in the coming months.”
Optimized for best in class linearity, power efficiency and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defense systems, and broadband solutions.