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Raytheon has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors.
GlobalFoundries (GF) has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated GaN on silicon semiconductors.
Mitsubishi Electric Corporation announced that it will begin shipping samples of a new GaN power amplifier module for use in 5G massive MIMO base stations.
Yole Intelligence releases its annual RF GaN report, providing an overview of the market and the players in the various segments, along with their product ranges and technologies.
Richardson RFPD, Inc. announced the availability and full design support capabilities for a new GaN high-power amplifier from United Monolithic Semiconductors.
Qorvo® announced the QPA3908 and QPA3810, two GaN 8 W power amplifier modules (PAMs) that offer a combination of high performance and a significantly smaller footprint than traditional discrete component solutions.
Ampleonis participating in the IEEE International Microwave Symposium (IMS), held in Denver, Colo., USA ,and is introducing several GaN and LDMOS solutions.
