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Richardson RFPD, Inc. announced the availability and full design support capabilities for a new GaN high-power amplifier from United Monolithic Semiconductors.
Qorvo® announced the QPA3908 and QPA3810, two GaN 8 W power amplifier modules (PAMs) that offer a combination of high performance and a significantly smaller footprint than traditional discrete component solutions.
Ampleonis participating in the IEEE International Microwave Symposium (IMS), held in Denver, Colo., USA ,and is introducing several GaN and LDMOS solutions.
Founded in 2012 by MIT researchers as Cambridge Electronics, 2022 sees the company reborn with a new moniker, Finwave Semiconductor, Inc., and a focused mission: to revolutionize the future of 5G communications with next-generation 3D GaN technology.
GaN Systems announced availability of its GaN transistor ADS models to facilitate customer ease-of-use in RF power markets traditionally dominated by expensive Si LDMOS and other RF power technologies.
IDTechEx’s latest research report on “Thermal Management for 5G 2022-2032” finds that GaN has a significant opportunity within the 5G market and this creates a downstream effect on other components such as die attach materials.
NXP® Semiconductors announced a new series of RF power discrete solutions for 32T32R active antenna systems, complementing NXP’s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios.
Infineon Technologies AG is strengthening its market leadership in power semiconductors by adding significant manufacturing capacities in the field of wide bandgap (SiC and GaN) semiconductors.
Modelithics, Inc., announced version 21.1.5 of the Modelithics MACOM GaN Library, the library now includes a total of six models for MACOM PURE CARBIDE™ GaN devices.
