Articles Tagged with ''GaN''

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability GaN HEMTs.

Raytheon has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors. 

GlobalFoundries (GF) has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated GaN on silicon semiconductors.

mmTron Inc. announced the highest efficiency class AB GaN power amplifier (PA) MMIC for the 17.3 to 21.2 GHz satellite downlink band.

Mitsubishi Electric Corporation announced that it will begin shipping samples of a new GaN power amplifier module for use in 5G massive MIMO base stations.

Yole Intelligence releases its annual RF GaN report, providing an overview of the market and the players in the various segments, along with their product ranges and technologies.

mmTron, Inc. announced a family of five GaN power amplifiers (PAs) for the mmWave 5G and satellite communications (satcom) bands from 22 to 41 GHz.

Ampleon will showcase their latest solutions and innovative products in GaN and LDMOS technologies at the European Microwave Week. 

Qorvo® announced the QPA3908 and QPA3810, two GaN 8 W power amplifier modules (PAMs) that offer a combination of high performance and a significantly smaller footprint than traditional discrete component solutions.