Articles Tagged with ''GaN''

Raytheon to Advance Gallium Nitride Technology

The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Co. a $14.9 million contract to further enhance its process for producing gallium nitride-based semiconductors. The new agreement aims to increase the performance, yield and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits and circulator components.


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