Articles Tagged with ''GaN''

Advantech Wireless, a global trusted leader of wireless broadband communications solutions for commercial, critical infrastructure & government and military clients, announced that it has increased its production capacity of GaN technology based SSPAs and BUCs in order to meet high market demand. 

 RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, unveiled 11 new amplifiers of which six are gallium nitride-(GaN) based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1.  

 M/A-COM Technology Solutions Inc. (“MACOM”), announced a new portfolio of surface mount S-Band GaN power products optimized for commercial air traffic control, weather radar and military radar applications. The new products are available in a range of packaging options and power levels. 

 Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.  

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, will showcase the industry’s broadest GaN product portfolio along with a live GaN on Si demo at EuMW 2014 in Rome, Italy, at booth 131. 

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. 

 Infineon Technologies AG  and International Rectifier Corp. have signed a definitive agreement under which Infineon will acquire International Rectifier for $40 per share in an all-cash transaction valued at approximately $3 billion.  

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.

Richardson RFPD Inc.has announced its Gold-level sponsorship of the Electronic Design Innovation Conference (EDI Con 2014) to be held at the Beijing International Convention Center, Beijing, China, April 8-10, 2014. As a gold sponsor, Richardson RFPD will organize a special expert forum discussing the state-of-the-art in Gallium Nitride (GaN) semiconductor technology targeting high-power RF and microwave applications. As the sponsor, Richardson RFPD has assembled a panel of experts from leading suppliers of discrete transistors and integrated circuits based on GaN technology.