Articles Tagged with ''GaN''

Northrop Grumman developed a record-setting GaN chip at its Redondo Beach facility, delivering ultra-fast, secure W-Band wireless links for military radars and next-gen 5G/6G connectivity in under six months.

Modelithics announced that new high-power GaN models from Guerrilla RF, Inc. have been added to the Modelithics COMPLETE Library™. 

Next-generation UHF band GaN solid state power amplifiers (SSPAs) developed by Celestia TTI will transmit UHF signals from space to terrestrial users when the SpainSat NG I launches from Cape Canaveral, Fla., on January 29, 2025.

Teledyne HiRel Semiconductors announces the availability of its GaN high-power RF switch, model TDSW84230EP. 

CML Micro has announced the launch of a Ka-Band GaN power amplifier that represents a cost-effective building block for commercial high volume satellite communication terminals.

Guerrilla RF, Inc. has finalized the acquisition of Gallium Semiconductor's entire portfolio of GaN power amplifiers and front-end modules. 

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability GaN HEMTs.

Raytheon has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors. 

GlobalFoundries (GF) has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated GaN on silicon semiconductors.

mmTron Inc. announced the highest efficiency class AB GaN power amplifier (PA) MMIC for the 17.3 to 21.2 GHz satellite downlink band.