Articles Tagged with ''GaN''

WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry,announced the expansion of its GaN technology portfolio with addition of the NP45 gallium nitride on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base station power amplifiers operating at 2.7 GHz and above where bandwidth and linearity performance are key differentiators.

Wolfspeed, a Cree Company, has partnered with Lockheed Martin to provide GaN high power amplifiers (HPAs) for the U.S. Air Force’s Space Fence, which will significantly improve the timeliness with which operators can detect space events that could potentially threaten GPS satellites or the International Space Station.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new 2W GaN driver amplifier from Qorvo. The TGA2958-SM is a packaged Ku-Band amplifier fabricated on Qorvo’s 0.15um GaN on SiC production process (QGaN15). Operating over a 13 to 18 GHz bandwidth, the TGA2598-SM delivers 2W of saturated output power with 20 dB large signal gain and > 25 percent power added efficiency. 

Advantech Wireless, a global leader for satellite broadband communications solutions, announced the release of the Second Generation GaN Technology based 300W/400W X-Band SapphireBlu™ SSPA/SSPB for military applications.

Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.

M/A-COM Technology Solutions Inc., a leading supplier of high performance analog RF, microwave and optical semiconductor products, announced the new NPT2024, a wideband transistor optimized for DC to 2.7 GHz operation using MACOM’s proprietary gallium nitride on silicon (GaN on Si) process is sampling today. The NPT2024 supports CW, pulsed and linear operation, boasting output levels up to 200 W. 

Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced a new highly cost effective, high performance Ka-band 3 watt GaN power amplifier for commercial VSAT satellite ground terminals transmitting high speed internet data.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at European Microwave Week (EuMW) 2015, which will take place September 6–11, 2015 in Paris.

API Technologies Corp. a leading provider of high performance RF, microwave, millimeter wave, and power solutions, announced it will present its full line of RF/microwave products at European Microwave Week (EuMW) at Le Palais de Congres, Paris, September 8-10, 2015, at Stand #152.

M/A-COM Technology Solutions Holdings Inc., a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, will showcase the industry’s broadest and most advanced Gallium Nitride (GaN) RF product and technology portfolio at European Microwave Week, September 6-11 in Paris, France at Booth #235.