Articles Tagged with ''GaN''

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.

Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD219, a 4 to 8 GHz low noise amplifier (LNA) in die form, to their growing line of standard GaN amplifier products.

Advantech Wireless Inc., a privately-held Canadian corporation and manufacturer of satellite, RF equipment and microwave systems announced the release of the new 2.5 kW TROPO C-Band modular GaN based solid state power amplifier.

Modelithics, Inc., in partnership with TriQuint Semiconductor, has released the latest update to the growing library of high-accuracy non-linear simulation models for TriQuint gallium nitride (GaN) transistors.

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.

Richardson RFPD, Inc. announced the availability and full design support capabilities for a new 50 to 1218 MHz GaN CATV power doubler amplifier from ANADIGICS.

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.