Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components: a 20 W, 6 GHz die; a 75 W, 6 GHz die; and a 320 W, 4 GHz die. Currently comprised of five die, the first two of which were released last September, the family still represents the only 50 V bare GaN HEMT die publicly available on the market.
Cree’s family of 0.4um, 50V GaN HEMT die offer hybrid amplifier designers higher gain, efficiency, and power density while operating over a broad, instantaneous frequency bandwidth, providing an effective alternative to silicon (Si) and gallium arsenide (GaAs) technologies. Additional performance benefits include higher breakdown voltage, thermal conductivity, and saturated electron drift velocity.
Designed for operation up to 6 GHz, the 20, 40, 75, and 170 W 50 V GaN HEMT die exhibit 17dB typical small signal gain and 60 percent typical power added efficiency at 6GHz and 18dB typical small signal gain and 65 percent typical power added efficiency at 4 GHz. The new 20 and 75 W die are suitable for two-way private radios, broadband amplifiers, cellular infrastructure, test instrumentation, and class A linear amplifiers. The 40 W die can also be employed in cellular infrastructure, and the 170 W die can be employed in tactical and satellite communications and broadband, industrial, scientific and medical amplifiers.
Designed for operation up to 4 GHz, the 320 W 50 V GaN HEMT die exhibits 19 dB typical small signal gain and 65 percent typical power added efficiency at 4 GHz. Like the 170 W die, it too is well-suited for use in tactical and satellite communications and broadband, industrial, scientific and medical amplifiers. Additionally, all 50 V die in the current product family are ideal for use in class AB linear amplifiers.
Cree’s 50 V GaN HEMT die are supplied in Gel-Pak® Vacuum Release™ trays, a non-tacky membrane that immobilizes the components to ensure damage-free transportation and storage. The order multiple is 10 GaN HEMT die per Gel-Pak tray.
For additional information, please visit www.cree.com/rf.