Cree, Inc. announced that semiconductor industry veteran Gregg Lowe — former CEO of Freescale and 28-year veteran of TI — will be the company's new president and CEO. GaN supplier Wolfspeed will be part of Lowe's portfolio.
Creeannounced mixed fiscal fourth quarter and year-end financial results on August 11. For Q4, company revenue was $382 million, down 6.7 percent from the prior quarter and down 12 percent from the year-ago quarter. For the full year (FY2015), Cree revenue was $1.63 billion, down 0.9 percent from FY2014. For fiscal year 2015, Power and RF Products revenue was $123.9 million, a 15 percent increase over fiscal 2014. CFO Michael McDevitt said the gain was "driven by growth in our power products."
Cree Inc., a market leader in silicon-carbide (SiC) power and RF products announced the acquisition of APEI, a global leader in power modules and power electronics applications. Combining two highly complementary innovators, the acquisition enables Cree’s Power and RF business to extend its leadership position and help to accelerate the market for high-performance, best-in-class SiC power modules.
Cree, Inc. announced that Cree's wholly owned Power and RF subsidiary has submitted a draft registration statement on a confidential basis to the U.S. Securities and Exchange Commission for a potential initial public offering of the subsidiary’s Class A common stock.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the new CDPA35045 asymmetric Doherty power amplifier (PA) reference design for the 3.5 to 3.7 GHz band.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.
Cree, Inc., a leader in gallium nitride (GaN) RF devices, has earned the U.S. Department of Defense (DoD) manufacturing readiness level eight (MRL 8) designation. Awarded for its production of GaN monolithic microwave integrated circuits (MMICs), this designation verifies Cree’s ability to provide assured, affordable and commercially viable production capabilities and capacities for items essential to national defense.