Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation. The new CGHV50200F GaN high electron mobility transistor (HEMT) is also the industry’s highest power transistor for C-Band applications, such as satellite communications.
The new 50 Ohm, internally matched 200 W GaN HEMTs deliver high power, high efficiency, high gain, and wide bandwidth performance. Exhibiting 180 W typical PSAT, 11.5 dB typical power gain and 48 percent typical power efficiency, these transistors finally allow solid state power amplifiers (SSPAs) to effectively replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. Featuring a smaller, lighter footprint and a significantly longer lifespan than TWTs, GaN-enabled SSPAs can reduce overall system weight and mitigate both operational and replacement costs.
The new 200 W CGHV50200F GaN HEMTs are supplied in a ceramic/metal flange package (type #440215) measuring 23.75 to 24.26 mm (0.935" to 0.955") x 23.01 mm (0.906") including the gain and drain or 17.25 to 17.55 mm (0.679" to 0.691") without.
For more information about Cree’s new 200W C-Band GaN HEMT, please visit http://www.cree.com/RF/Products/Satellite-Communications/Packaged-Discrete-Transistors/CGHV50200Fto access product datasheets.