Articles Tagged with ''GaN''

EM Solutions has received multiple orders for its Ka-Band Block upconverter products for use in aeronautical satcom applications.

Airbus Defence and Space, the world’s second largest space company, won its third contract in 18 months for its latest advanced GaN SSPAs, bringing the total ordered to more than 350.

Northrop Grumman Corp. announced the availability of two new GaN power amplifiers at the International Microwave Symposium 2016 (IMS) in San Francisco, Calif.

MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced the newest entries in its MAGb series of GaN on Silicon power transistors for use in macro wireless base stations.

MACOM announced a 300 W GaN on Silicon rugged power transistor in cost effective plastic packaging optimized for use in commercial scale solid-state RF energy applications. Based on MACOM’s Gen4 GaN technology, the new MAGe-102425-300 delivers performance that exceeds LDMOS at an equivalent price profile at scaled volume production levels.

MACOM Technology Solutions Inc. (MACOM) will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, Calif., May 24 - 26. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications.

Richardson RFPD Inc. announced its sponsorship of the Electronic Design Innovation Conference China (EDI CON) 2016 GaN Panel and Small Cell Workshop events. EDI CON China 2016 will be held from April 19-21 at the China National Convention Center in Beijing, China.

Fujitsu Ltd. and Fujitsu Laboratories Ltd. announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75 to 110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.

Ampleon has extended its portfolio of GaN RF power transistors based on a 0.5 µm HEMT process technology.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting its portfolio of GaN RF devices for L-, S-, C-, and X-Band radar at the 2015 International Radar Symposium India (IRSI-15), which will take place December 15–19 in Bangalore.