ARTICLES

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How to Ensure Reliability of Passive Components in GaN MMICs

Higher thermal conductivity and breakdown voltage makes GaN MMICs a key ingredient in the most critical aerospace, military, and satellite designs. However, while GaN on SiC RF technology is achieving widespread adoption in military and aerospace systems, reliability is a crucial requirement along with performance and affordability.


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How to Ensure Reliability of Passive Components in GaN MMICs

Higher thermal conductivity and breakdown voltage makes GaN MMICs a key ingredient in the most critical aerospace, military, and satellite designs. However, while GaN on SiC RF technology is achieving widespread adoption in military and aerospace systems, reliability is a crucial requirement along with performance and affordability.


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Wolfspeed Large-Signal Models: Accurately Validating RF Designs

This article will provide a top-level view of Wolfspeed's large-signal models for GaN power transistors and their application in an RF design. The article will include an overview of Wolfspeed's GaN on SiC devices, the associated large-signal models, and their advantages versus real-world devices during the development process. The piece will continue with an overview of a typical design procedure and a case study, then conclude with a discussion of the resources available to designers and how to get started.


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Wolfspeed Large-Signal Models: Accurately Validating RF Designs

This article will provide a top-level view of Wolfspeed's large-signal models for GaN power transistors and their application in an RF design. The article will include an overview of Wolfspeed's GaN on SiC devices, the associated large-signal models, and their advantages versus real-world devices during the development process. The piece will continue with an overview of a typical design procedure and a case study, then conclude with a discussion of the resources available to designers and how to get started.


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Wolfspeed releases highest power L-Band radar GaN HEMT

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will release the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — to market at European Microwave Week 2016, which will take place in London, October 3–7.


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Wolfspeed announces complete C-Band radar lineup

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems.


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