Timed with the 2017 Association of Old Crows symposium, Wolfspeed has announced a GaN on SiC HEMT power amplifier for electronic warfare (EW) systems countering improvised explosive devices (IED).

Internally matched, the CG2H30070 covers 500 MHz to 3 GHz and delivers a minimum of 70 W CW output power with 12 dB power gain, biased at +28 V. Drain efficiency is 55 percent. When power combined, two devices achieve greater than 100 W CW from 700 MHz to 3 GHz with 48 percent efficiency at +85ºC. Wolfspeed offers an application circuit for this dual device configuration.

The CG2H30070 is assembled in a traditional flange package, with a junction-to-case thermal resistance of 1.5 ºC/W.

In addition to IED jammers, the new GaN power transistor is suited for use in military communications, radar and data links operating between 500 MHz and 3 GHz.

Wolfspeed is a business unit of Cree, applying SiC and GaN technology for power and RF applications.