This article will provide a top-level view of Wolfspeed's large-signal models for GaN power transistors and their application in an RF design. The article will include an overview of Wolfspeed's GaN on SiC devices, the associated large-signal models, and their advantages versus real-world devices during the development process. The piece will continue with an overview of a typical design procedure and a case study, then conclude with a discussion of the resources available to designers and how to get started.

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