Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor. By offering extended operational bandwidth, the new MMRF5014H is ideal for wideband amplifiers in applications such as military communications, jammers, electronic warfare and radar.

Performance of 100 W CW power over 200-2500 MHz bandwidth with greater than 12 dB gain across the band is demonstrated in the available reference circuit. The transistor is designed to deliver 58 percent efficiency, and easily achieves power levels in excess of 125 W in narrower band applications. The device additionally delivers best-in-class thermal performance of less than 1° C/W and offers extreme VSWR ruggedness of 20:1.

This new GaN product is the first of several that Freescale plans introduce to help customers push the current boundaries of performance while addressing the size, weight and power (SWaP) requirements of the defense industry. “Radios today typically require multiple RF amplifiers to cover a wide frequency spectrum, but with the new MMRF5014H, only one is needed,” said Paul Hart, senior vice president and general manager of Freescale’s RF group. “Size, weight and power upgrades are critical for our customers, and by replacing several amplifiers with a single device, the MMRF5014H helps across all three of these factors.”

Freescale’s Military RF products are supported by a dedicated team of experts to assist customers through all stages of device selection, implementation and system development.

Samples and evaluation circuits for the MMRF5014H transistor are available now. For more information and pricing, please contact a local Freescale sales office or visit For more information visit