Richardson RFPD, Inc., an Arrow Electronics company, announced the availability and full design support capabilities for a new RF power, GaN transistor from NXP Semiconductors.

The MMRF5018HSR5 is a 125 W, continuous wave, RF power transistor optimized for wideband operation up to 2700 MHz. It includes input matching for extended bandwidth performance.

Key features include:

  • High power density
  • Decade bandwidth performance
  • Enhanced thermal resistance packaging
  • Power gain: 12.0 dB
  • Drain efficiency: 64.4 percent (typical)
  • High ruggedness: > 20:1 VSWR.

With its wideband capabilities, high gain, ruggedness and drain efficiency, the MMRF5018HSR5 offers a complete solution for multiband communication applications. It is also versatile for a range of CW, pulse and wideband RF applications.