Internally-matched, Quasi-MMIC devices include 15 W L-band driver, 50W C-band HPA and 200W L-band HPA

Richardson RFPD Inc. announced the availability and full design support capabilities for three internally-matched, Quasi-MMIC GaN on SiC HEMTs from United Monolithic Semiconductors S.A.S. (UMS).

The CHZ015A-QEG  is a 15 W, wideband packaged GaN HEMT that offers broadband solutions for a variety of RF L-band power applications, including pulsed radar. It operates from 1.2 to 1.4 GHz and features PAE up to 55% and MTTF > 106 hours at Tj = 200 ºC. It is offered in a low-cost SMD package.

The CHZ050A-SEA  is a 60 W, GaN HEMT that offers broadband solutions for a variety of RF C-band applications, including pulsed radar and satellite communications. It operates from 5.2 to 5.8 GHz and features PAE up to 45% and MTTF > 106 hours at Tj = 200 ºC. It is offered in a low thermal resistance, flanged ceramic package and requires no external matching circuitry. External input and output bias tees are required.

The CHZ180A-SEB  is a 200 W, wideband GaN HEMT that offers broadband solutions for a variety of RF L-band applications, including pulsed radar. It operates from 1.2 to 1.4 GHz and features PAE up to 53% and MTTF > 106 hours at Tj = 200 ºC. It is offered in a flanged ceramic package that provides low parasitic and low thermal resistance.

Additional key features of the UMS GaN HEMTs include:

To find more information or to purchase these products today online, please visit the CHZ015A-QEG, CHZ050A-SEA  and CHZ180A-SEB  webpages. The devices are also available by calling 1-800-737-6937 (within North America.)