Designed for marine radar, SatCom and other high efficiency point-to-point and military communications applications
Richardson RFPD Inc. announced the availability and full design support capabilities for three discrete power GaN on SiC HEMTs from Qorvo.
The TGF2952, TGF2953 and TGF2954 are designed using Qorvo’s proven TQGaN25 production process that features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The HEMTs feature maximum power added efficiency levels that make them appropriate for high efficiency applications.
The new devices are designed for a range of high efficiency applications, including marine radar, satellite communications, point-to-point communications, military communications, broadband amplifiers, and high efficiency amplifiers.
According to Qorvo, key features of the new GaN MMIC power amplifiers include:
|
Part Number |
Frequency Range |
Nominal |
Maximum (% @ GHz) |
Nominal Power Gain |
Bias (V @ mA) |
Chip Dimensions |
|
DC-14 |
+38.4 @ 3.0 |
75.7 @ 3.0 |
20.4 @ 3.0 |
32 @ 25 |
1.01 x 0.82 x 0.10 |
|
|
DC-12 |
+41.2 @ 3.5 |
73.7 @ 3.5 |
18.2 @ 3.5 |
32 @ 50 |
1.01 x 1.14 x 0.10 |
|
|
DC-12 |
+44.5 @ 3.0 |
71.6 @ 3.0 |
19.6 @ 3.0 |
32 @ 100 |
1.01 x 1.68 x .010 |
To find more information or to purchase these products today online, please visit the TGF2952, TGF2953 and TGF2954 webpages. The devices are also available by calling 1-800-737-6937.
