Microwave Journal
www.microwavejournal.com/articles/25517-three-discrete-power-gan-on-sic-hemts

Three Discrete Power GaN on SiC HEMTs

November 17, 2015

Three New Discrete Power GaNDesigned for marine radar, SatCom and other high efficiency point-to-point and military communications applications

Richardson RFPD Inc. announced the availability and full design support capabilities for three discrete power GaN on SiC HEMTs from Qorvo.

The TGF2952, TGF2953 and TGF2954 are designed using Qorvo’s proven TQGaN25 production process that features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The HEMTs feature maximum power added efficiency levels that make them appropriate for high efficiency applications.

The new devices are designed for a range of high efficiency applications, including marine radar, satellite communications, point-to-point communications, military communications, broadband amplifiers, and high efficiency amplifiers.

According to Qorvo, key features of the new GaN MMIC power amplifiers include:

Part Number

Frequency Range
(GHz)

Nominal
PSAT
(dBm @ GHz)

Maximum
PAE

(% @ GHz)

Nominal Power Gain
(dB @ GHz)

Bias

(V @ mA)

Chip Dimensions
(mm)

TGF2952

DC-14

+38.4 @ 3.0

75.7 @ 3.0

20.4 @ 3.0

32 @ 25

1.01 x 0.82 x 0.10

TGF2953

DC-12

+41.2 @ 3.5

73.7 @ 3.5

18.2 @ 3.5

32 @ 50

1.01 x 1.14 x 0.10

TGF2954

DC-12

+44.5 @ 3.0

71.6 @ 3.0

19.6 @ 3.0

32 @ 100

1.01 x 1.68 x .010

To find more information or to purchase these products today online, please visit the TGF2952, TGF2953 and TGF2954 webpages. The devices are also available by calling 1-800-737-6937.

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