AMP2107ADB-2 is a superb 1.0–18.0 GHz, 50 W Amplifier System. This dual-band amplifier features 47 dB Minimum Gain, Type N Female RF Input, Sample & RF output ports.

Exodus AMP2142DB-100 dual-band amplifier features 50 dB Min. Gain, Type N Female RF Input, Sample & RF output ports.

Exodus AMP2120-3 is designed for broadband EMI-Lab, Comm. and EW applications.

The AMP3083 produces 40 W nominal, 20 W typical P1dB with a minimum power gain >43dB.  Included are both current & temperature sensing.

AMP4072 is designed for broadband EMI-Lab, Comm. and EW applications. Covers 26.5 to 40.0 GHz, and nominal powers 10 W rated.

AMP2140C. Best-in-Class 2.5 to 7.5 GHz, 1000 W minimum Amplifier System. 60 dB Minimum Gain, Type N Female RF Input/Sample ports, and WRD250 waveguide output.

AMP2141E. Best-in-Class 7.5-18.0GHz, 1000 W minimum Amplifier System. 60 dB Minimum Gain, Type N Female RF Input/Sample ports, and more.

AMP4065-LC (18.0 to 26.5 GHz) and AMP4066-LC (26.5 to 40.0 GHz) compact designs provide superb RF Performance with Unprecedented P1dB power as compared to TWT’s.

Compact high power 5.4 to 5.9 GHz 2.5 KW Pulse amplifier. Exodus' AMP4039P-3 provides 2500 W with a minimum power gain of 64 dB.

Exodus Advanced Communications' AMP2135B-1 designed for broadband EMI-Lab, Comm. and BCI applications. Wide frequency range and class A/AB linear design. 

AMP4065LC-2 delivers 10 W minimum across 18 to 26.5 GHz. At rated power, the two-tone intermodulation products are −30 dBc typical and harmonics −20 dBc maximum.

Introducing our MPA1004, an ultra broadband 0.5 to 26.5 GHz medium power solid-state amplifier. The MPA1004 module produces 1 W of CW power with a gain of 30 dB.

Exodus Advanced Communications announces our AMP3132 compact 26.5 to 40.0 GHz, 38 dB gain solid state module. Featuring instantaneous wideband operation, 6.0 B Peak to Peak flatness. 

AMP2131P, 500 to 1000 MHz, 10 W PULSE, 70 dB, 208 VAC system features instantaneous wide-band LDMOS design with versatile interface options.

Exodus Advanced Communications is pleased to introduce our AMP4065 18.0 to 26.5 GHz high power Solid-State amplifier. The AMP4065 system produces 40 W of CW power with a gain of 46 dB.

AMP4066 is a 26.5 to 40.0 GHz high power solid-state amplifier. The AMP4066 system produces 40 W of CW power with a gain of 46 dB. This is a “State-of- the-Art” power amplifier. The amplifier features our instantaneous wide-band hybrid module design with built-in protection circuits.

The AMP1110B state high power amplifiers covers the entire 1 to 8 GHz frequency range at 40 W minimum and high P1dB output power rating.  Operating off 32 VDC at 8 Amp typical and covering 3 full octaves bandwidth this Class AB linear module features built-in protection circuits. 

Exodus Advanced Communications introduces AMP2065A, a solid-state, 6 to 18 GHz, 200 W CW, 53 dB system. This class AB linear State of the Art C & W power amplifier features an instantaneous wide-band GaN design with built-in protection circuits for high reliability and ruggedness.

AMP1121 is a linear GaAs FET design that provides 30 W at 1 dB compression and 40 W saturated, with an instantaneous bandwidth from 6 to 18 GHz. The amplifier has 45 dB minimum power gain and 4 dB maximum peak-to-peak flatness when driven with a constant input of 0 dBm.

The AMP1147, 500 to 6000MHz, 10 W, 40 dB, 28 V module.  This class AB linear state of the art solid state high power amplifier features instantaneous ultra-broadband GaN design in a small form-factor, lightweight aluminum housing, and built-in protection circuits for high reliability and ruggedness.  

Exodus introduces its  solid state low noise amplifier Module LNA5003 covering the 7.35 to 7.65 GHz frequency band at  +25 dBm CW output.  The Coaxial LNA5003 operates from a 9 VDC supply at 0.3 A Nom. with a noise figure of 1.5 dB max, a Gain of 25 dBmin. and a Gain flatness of 1 dB Max peak to peak.

Exodus new wideband SSPA Module AMP1090 covers the full 2 to 8 GHz frequency band at 10 W min. and up to 50 W power levels. The AMP1090 uses CW GaN devices and operates from a 32 VDC supply at 3 A max. with gain flatness of 3 dB max peak to peak. This module is suitable for use with all modulation standards and features built-in protection circuits.

Exodus introduces the high frequency, wide band AMP3116 SSPA module covering the 26 to 32 GHz frequency band at 10 W. The AMP3116 uses GaAsFET Hybrid devices and operates from a 9 VDC supply with a 40 dB gain and a gain flatness of 4.0 dB Max peak to peak. This Module is suitable for use with all single channel modulation standards and features lightweight construction, high reliability and ruggedness.

Exodus Advanced Communications announced the release of their best in class SSPA model AMP3060—a 32 to 40 GHz, 10 W GaAs hybrid SSPA module. It provides 10 W CW Psat over the full bandwith 4 dB peak to peak flatness. This amplifier is designed for any application that requires wide band coverage such as EMI/RFI, Ka-Band radar, EW and high-power millimeter testing.

Exodus Advanced Communications is pleased to announce the release of a Best in Class State of the Art high peak pulse power amplifier. The 1000 W AMP3110P covers the 2700 to 3100 MHz frequency range at duty cycles of up to 10%. Features include a built-in isolator, fast pulse modulator, monitoring and additional protection circuits; this module is highly reliable and rugged. 

Exodus Advanced Communications is pleased to announce the release of a new State of the Art ruggedized solid state power amplifier. Our Best in Class power amplifier AMP1110 a 4 to 8 GHz, 40 W minimum saturated power output module. The AMP1110 is a Class AB linear GaN hybrid design with instantaneous bandwidth. Other features include 4.0 dB peak to peak flatness and 12 A max consumption. 

Exodus Advanced Communications is pleased to introduce the AMP1044 – a Best in Class high power GAN SSPA module covering the 1000 to 6000 MHz frequency band at 100 W CW. It features instantaneous bandwidth with 100 W minimum saturated power output, 4.0 dB Peak to Peak flatness and 24 A Max Consumption.

Exodus Advanced Communications has introduced its latest solid-state high power module, the AMP3060. This linear, GaAs FET hybrid, Class AB design provides 10 W output across 32 to 40 GHz, with a minimum power gain of 40 dB and 4 dB peak-to-peak maximum flatness when driven with a constant maximum input power of 0 dBm. The AMP3060 is suitable for EMI/EMC susceptibility, millimeter wave component testing, electronic warfare, Ka-Band satellite and general communications applications. 

Exodus Advanced Communications announced the release of its VHF/UHF amplifier model AMP1136, a new 20 to 1000 MHz, 200 W Min CW LDMOS module. It features instantaneous bandwidth with 3 dB peak-to- peak flatness and 24 A max consumption operating from a 32 VDC source. This unit is suitable for all single channel modulations standards and has built in protection circuits. 

Exodus Advanced Comm. announced the release of a state of the art ruggedized power amplifier. AMP3095 is our 31 to 40 GHz, 5 W Min broadband module, featuring a Class AB linear GaAsFET hybrid design. It operates from a 9 VDC supply at 16 A with gain flatness of 8.0 dB Max peak to peak. With instantaneous wide bandwidth, built-in protection circuits and high reliability the AMP3095 is suitable for all single channel modulation standards and applications. 

AMP2084 ultra-broadband high power amplifier system covering the full 6 to 18 GHz frequency range at 80 W Min / 100 W typical and featuring Class AB linear GaN design, gain of 50 dB and less than 4 dB p-p power flatness all in a 5 U standard rack chassis. Operating from a 180 to 240 VAC power source, the AMP2084 has built-in protection circuits and is suitable for all single channel modulations standards.

Exodus Advanced Communications is pleased to announce the release of its VHF/UHF amplifier model AMP1136, a 20 to 1000 MHz, 200 W Min CW LDMOS module. It features instantaneous bandwidth with 3.0 dB peak to peak flatness and 24 A max consumption operating from a 32 VDC source. This unit is suitable for all single channel modulations standards and has built in protection circuits.

Exodus introduces the AMP1122 module which covers the 6 to 18 GHz frequency range instantaneously at 60 W CW typical saturated output power with a flatness of 5 dB peak to peak. Consuming 27 Amp typical and operating from a 32 VDC source this module is perfect for EW and EMI/RFI applications. This module is designed for use with any high power application requiring ultra-wide band coverage.

Exodus introduces the AMP1049A module covering the entire instantaneous 2 to 6 GHz frequency range at 40 W CW minimum and 50 W CW typical with flatness of less than 4 dB peak to peak. Also designed to use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness.

Exodus introduces the AMP1071, a solid-state RF amplifier module covering the entire ultra-wide 2.0 to 20.0 GHz frequency range instantaneously at 20 W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32 VDC source at less than 10 A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage.

Exodus introduces the AMP1064 module covering the entire instantaneous 20 to 6000 MHz frequency range at 20 W CW minimum and 25 W CW typical with flatness of less than 4 dB peak to peak.  Using State of the Art GaN devices and operating from a 50 VDC source at less than 3 Amp consumption this module is suitable for use with all single channel modulations standards and applications requiring high power and ultra-wide band coverage.

Exodus introduces the ultra-wide band AMP1074 compact SSPA coveringthe full 2 to 20 GHz frequency band at 10 W Min. The AMP1074 uses C&W hybrid GaN devices, and operates from a 32 VDC supply at 4.5 A with gain flatness of 5.0dB Max peak to peak.  Covering multi-bands, this SSPA is suitable for use with all modulation standards and features a small form factor, lightweight construction and high reliability.

Exodus Advanced Communications introduces AMP1124 which provides a typical output power of 100 W P1dB and 200 W Psat across 0.7-4.2 GHz frequency band. Using the latest in state of the art GaN devices, gain flatness is 4.0 dB peak to peak and requires 32 V at 40 A Max. Suitable for use with all modulations standards requiring high power and wide band coverage.

Exodus Advanced Communications introduces AMP1096. A 500 to 2,500 MHz, 200 W GAN SSPA module.  Features instantaneous bandwidth from 500 to 2,500 MHz with 200 W minimum saturated power output, 3.0 dB Peak to Peak flatness and 24 A max consumption. Suitable for any application that requires high power and wide band coverage such as EW and ATE.

Exodus Advanced Communication introduces AMP3085.  8 to 12 GHz, 100 W Min / 120 W typical GAN module.  It features instantaneous bandwidth from 8000 to 12000 MHz with 100 W minimum saturated CW power, 4.0 dB peak to peak flatness and 22 A max consumption. Suitable for any application requiring high power and wide band coverage such as TWTA replacement, EW, and EMI/RFI susceptibility testing.

Exodus Advanced Comm.  has released the latest in a family of very high power, X-Band solid-state amplifiers. With a GaN, Class AB design to achieve maximum output and high efficiency, the AMP4002P delivers 500 W pulsed output power, 400 W minimum, from 9.1 to 9.5 GHz. The pulse width can range from 0.35 to 50 µs and 5 kHz pulse repetition frequency.

Exodus Advanced Comm. announced the release of a new high power ultra broadband solid-state power amplifier: AMP1062 operates over 6 to 18 GHz instantaneous bandwidth with 40 W minimum in CW and 30 W P1dB typical output power using state of the art Class AB GaN devices. AMP1062 features 46 dB of gain and 32 V DC supply voltage at 14 amp maximum current consumption.

Exodus Advanced Communications introduced a new high power SSPA module covering the 2 to 6 GHz frequency spectrum featuring state-of-the-art GaN devices and good efficiency. This compact, lightweight module features an impressive 250 W min CW output power at 28 V DC with 5 uSec switching speed.