Well-known for its comprehensive ranges of connectors and cable assemblies, AtlanTecRF has introduced its range of high grade, yet affordable, coaxial adapters in the popular SMA and Type N series of interconnects. Suitable for use to 18 GHz and in some cases to 26 GHz, these professional quality adapters are available from stock and feature materials well suited to commercial, defence and aerospace environments.
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GigOptix offers a suite of best-in-class E-band active and passive MMIC solutions that include power amplifier, power detector and Lange coupler MMIC for E-band communication systems. GigOptix high-performance amplifier solutions enable transmission systems that enable industry leading high output power.
GigOptix provides a broad portfolio of MMIC amplifier designs including broadband amplifier MMICs covering DC to 50 GHz as well as high-frequency 70 and 80 GHz amplifier designs for E-band communication systems.
Linear Technology Corp.'s LTC3774 is a current-mode dual output synchronous step-down DC/DC controller that enables the use of very low DC resistance (DCR) power inductors by enhancing the current-sense signal. Power inductor DCRs down to 0.2 milliohms can be utilized to maximize converter efficiency (up to 95%), increase power density and reduce the output ripple voltage in high current applications.
RFMW, Ltd. announces design and sales support for the TGA2814, S-Band amplifier from TriQuint Semiconductor. The TGA2814 covers 3.1 to 3.6 GHz with up to 80 W pulsed Psat and power added efficiency as high as 56%. Using 0.25 um GaN technology, this two-stage amplifier provides 25 dB of gain while drawing only 125 mA from a 30 V source.
RFMW, Ltd. announces sales support fora USB controlled, RF, digital step attenuator from Telemakus. The TEA13000-12 is based on an analog circuit driven by a 16-bit ADC providing extremely fine control down to ~0.03 dB step size. This fine resolution of the TEA13000-12 is needed for applications requiring cancellation or automatic level control (ALC) functions.
Renaissance has developed a new drop-in isolator to handle 15 W of reflected power in a compact size of 0.5” x 0.75” at X-Band frequencies. Covering 7.9 TO 8.4 GHz, this isolator provides a VSWR of 1.25:1 at input and output ports with loss of 0.5 dB and isolation of 20 dB over -40 to +85 C. It is specifically designed for Mobile Satellite architecture.
The HMPA and HHPA Series of Medium and High Power Amplifiers covers select bands from 20 to 100 GHz. A wide variety of gain and bandwidth combinations are available to provide the designer with a solution for most applications. Custom designs are available and in many cases NRE is not required.
RFMW, Ltd. announces design, sales support and availability of TriQuint Semiconductor’s TAT8804D1H ultra-linear GaAs amplifier MMIC intended for output stage amplification in CATV infrastructure applications where flat gain and low distortion are key considerations.
Richardson RFPD, Inc. introduces a new 50 V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi). The 0912GN-650V is internally-matched and capable of providing over 17 dB gain, 650 W of pulsed RF output power at 128 μs pulse width and 10% duty factor across the 960 to 1215 MHz band.