Products

DRO-16D3G-CD-1: Stabilized GaAs FET Oscillator

DRO-16D3G-CD-1PMI Model No. DRO-16D3G-CD-1 is a dielectrically stabilized GaAs FET oscillator with a center frequency of 16.3 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -70 dBc/Hz.  The unit requires +15 VDC and 150 mA and measures 1.06" x 1.63" x 0.98".


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DRO-7D7G-CD-1: Dielectrically Stabilized GaAs FET Oscillator

DRO-7D7G-CD-1PMI Model No. DRO-7D7G-CD-1 is a dielectrically stabilized GaAs FET Oscillator with a center frequency of 7.7 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -80 dBc/Hz.  The unit requires +15 VDC and 150 mA and measures 1.60" x 2.75" x 1.04".


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DRO-9D7G-CD-1: GaAs FET Oscillator

DRO-9D7G-CD-1PMI Model No. DRO-9D7G-CD-1 is a dielectrically stabilized GaAs FET Oscillator with a center frequency of 9.7 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -75 dBc/Hz.  The unit requires +15 VDC and 150 mA and measures 1.35" x 1.98" x 1.04".


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T1G2028536 GaN Transistor

T1G2028536RFMW Ltd. announces design and sales support for TriQuint’s T1G2028536, a 285 W GaN transistor available in a low thermal resistance, solder mount package as the T1G2028536–FS or flange mount package as the T1G2028536–FL. Both the –FS and -FL house the transistor in a ceramic NI-780 enclosure.


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WAT06E SMA-Connectorized Attenuator

Wavelex WAT06E PR PhotoRichardson RFPD Inc. announced availability of the WAT06E precision attenuator. It operates from DC to 6 GHz, with 50 Ohm impedance, with up to 30 dB attenuation, and features 20 W continuous wave (CW) RF power handling and 1.2:1 VSWR. It is ideally suited for wideband power attenuation, high power measurement, high power IP measurement, and RF bench test applications.


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