Richardson RFPD Inc. announced the availability and full design support capabilities for a GaAs MMIC low-noise, wideband amplifier from Analog Devices Inc. The HMC753LP4E operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5 V supply. The P1dB output power of up to +18 dBm enables the LNA to function as an LO driver for balanced, I/Q or image reject mixers.
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Richardson RFPD Inc. announced the availability and full design support capabilities for a new ultra-low-noise, flat gain LNA from Qorvo. The TQL9092 provides a gain flatness of 2 dB (peak-to-peak) over a wide bandwidth—from 1.5 to 3.6 GHz. At 2.6 GHz, the amplifier typically provides 22.6 dB gain, +37 dBm OIP3 at a 65 mA bias setting, and 0.6 dB noise figure. The LNA can be biased from a single positive supply ranging from 3.3 to 5 volts. It is offered in a 2 mm x 2 mm surface-mount package.
Richardson RFPD Inc. announced the availability and full design support capabilities for a broadband LNA from Skyworks Solutions Inc. The SKY67159-396LF single-stage, GaAs pHEMT LNA operates from 200 to 3800 MHz and features superior gain flatness and exceptional linearity in a compact 2 mm x 2 mm, 8-pin, dual flat no-lead package. It is designed for FDD and TDD 2G/3G/4G LTE small-cell base stations, as well as LMR, Milcom and M2M applications.
Richardson RFPD Inc. announced the availability and full design support capabilities for three discrete power GaN on SiC HEMTs from Qorvo. The TGF2952, TGF2953 and TGF2954 are designed using Qorvo’s proven TQGaN25 production process that features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The HEMTs feature maximum power added efficiency levels that make them appropriate for high efficiency applications.
Richardson RFPD Inc. announced the availability and full design support capabilities for a 2 W GaN driver amplifier from Qorvo. The TGA2958-SM is a packaged Ku-band amplifier fabricated on Qorvo’s 0.15 um GaN on SiC production process (QGaN15). Operating over a 13 to18 GHz bandwidth, the TGA2598-SM delivers 2 W of saturated output power with 20 dB large signal gain and > 25% power added efficiency.
Model SBP-2634034530-2828-X1 is a full Ka band power amplifier with a typical small signal gain of 45 dB and a typical P1dB of +30 dBm in the frequency range of 26.5 to 40 GHz. The typical DC power requirements for the amplifier are +6 VDC/2,500 mA and -5.0 VDC/110 mA, respectively. The input and output port configurations are both WR-28 waveguide with UG599/U flange.
RFMW Ltd. announces design and sales support for the SKY67159-396LF, a 200 to 3800 MHz LNA designed for applications including IoT, small cell infrastructure, tower mounted amplifiers and remote radio units. The SKY67159-396LF’s thermal characteristics allow in-system performance up to +105 degrees C. Broadband performance is achieved with a single matching circuit providing superior gain flatness, low noise figure (<1 dB) and good linearity (31 dBm OIP3).
Pasternack has just launched its new mobile website which marries powerful parametric search capabilities with a sleek, simplified and user-friendly interface that is specifically intended for smart phones and tablets. Pasternack’s main objective with the new mobile site was to provide engineers in the field the easiest, most intuitive process for searching and finding any of the company’s +40,000 RF components and cable assemblies.
Skyworks introduces an ultra-broadband low-noise amplifier (LNA) with superior gain flatness and exceptional linearity.The SKY67159-396LF single stage GaAs pHEMT LNA offers ultra-broadband performance with a single matching circuit, low noise figure and good linearity. On-die active bias design ensures consistent performance over process and temperature variation. The device allows high performance operation at temperatures up to +105 °C.