Exodus Advanced Comm. has released the latest in a family of very high power, X-Band solid-state amplifiers. With a GaN, Class AB design to achieve maximum output and high efficiency, the AMP4002P delivers 500 W pulsed output power, 400 W minimum, from 9.1 to 9.5 GHz. The pulse width can range from 0.35 to 50 µs and 5 kHz pulse repetition frequency.
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RFMW Ltd. announces design and sales support for two DOCSIS 3.1 compliant power doubler amplifiers from Qorvo. The RFPD3210 and RFPD3220 are hybrid GaAs/GaN devices offering excellent linearity and low distortion. Designed for 45 to 1218 MHz CATV amplifier systems, the RFPD3210 and RFPD3220 also offer high gain of 22.5 and 24.5 dB respectively. Low noise figure of 3 dB punctuates the performance of these Qorvo power doublers.
Richardson RFPD Inc. announced the availability and full design support capabilities for a power amplifier from M/A-COM Technology Solutions. The MAAP-011140-DIE is a 4-stage, 6 W power amplifier in bare die form that is fabricated using a GaAs pHEMT device process featuring full passivation for enhanced reliability. The power amplifier operates from 27.5 to 30.0 GHz and provides 24 dB of linear gain, 6 W saturated output power, and 23% power added efficiency.
RFMW Ltd. announces design and sales support for two power amplifier modules supporting 5 GHz Wi-Fi enabled CPEs, routers, pico cells and femto cells. The Qorvo RFPA5522 supports applications from 5.18 to 5.925 GHz with bias configurable to 5 or 3.3 V operation. The Qorvo RFPA5542 extends operation from 4.9 to 5.925 GHz and is optimized for the least number of external components on compatible reference designs.
RFMW Ltd. announces design and sales support for the Qorvo TGA2227, a 2 to 22 GHz low noise amplifier fabricated on Qorvo’s TQGaN15 GaN on SiC process. The Qorvo TGA2227 can also be used as a driver with >15 dB of small signal gain or a general amplifier with >20 dBm P1dB. With a nominal drain voltage of 8 V, the TGA2227 can be biased over a wide range of voltages with little impact on noise figure and gain
The TAT7472A1F is a 75 Ω RF amplifier designed for CATV use but capable of operation up to 1218 MHz, making it suitable for DOCSIS 3.1. It contains two separate amplifiers for push-pull applications and is fabricated using 6-inch GaAs pHEMT technology. Each amplifier contains on-chip active biasing, with bias current set points that are adjustable with a single resistor from the input to ground. Typical supply voltage for the TAT7472A1F is +5 V.
RFMW Ltd. announces design and sales support for Qorvo's TQL9092, a flat-gain, high-linearity, ultra-low noise amplifier (LNA). The TQL9092 provides 2 dB (peak-to-peak) gain flatness from 1.5 to 3.6 GHz.Typical gain is 22.6 dB and OIP3 is 39.5 dBm at a 65 mA bias setting. Noise figure at this setting would be 0.6 dB. The TQL9092 can be biased from a single positive supply ranging from 3.3 to 5 volts.
M/A-COM Technology Solutions Inc. announced its MAAM-011169 12 V CATV push-pull infrastructure amplifier designed to meet DOCSIS 3.1 and C-DOCSIS standards.The MAAM-011169 delivers 46 dBmV per channel output power with 25 dB gain and is optimized for very low distortion and high linearity in a 75 ohm push-pull amplifier circuit. It provides excellent input and output return loss over the 45 to 1200 MHz bandwidth whilst delivering superior thermal performance.
RFMW Ltd. announces design and sales support for the 0.5 W QPA9119, a high linearity amplifier from Qorvo. Covering 400 to 4200 MHz, the Qorvo QPA9119 has 17 dB of gain, a P1dB of 27.2 and offers +44 dBm OIP3. The QPA9119 draws only 137 mA from a 5 V supply and is ideal for repeaters and distributed amplifier systems. Designed to support both TDD and FDD systems, the Qorvo QPA9119 comes in a 3 x 3 mm QFN package. 
M/A-COM Technology Solutions Inc. announced the new MAGX-100027-100C0P. A wideband transistor optimized for DC-2.7 GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process. The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power levels up to 100 W (50 dBm). Featuring 50 V operation, this device offers CW operation of 18.3 dB gain at 2.45 GHz, and 70% drain efficiency.