RFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.
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Empower model BBM2E3KLP (SKU 1163) is a 20 to 520 MHz amplifier which is guaranteed to deliver 125 W output power and related RF performance under all specified temperature and environmental conditions. The amplifier module is 7.0” x 4.0” x 1.5” and will be on display at upcoming trade shows. This amplifier is suitable for broadband jamming and high power linear applications in the UHF / VHF bands.
RFMD’s new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.
Richardson RFPD, Inc. introduces a new 80 to 105 GHz balanced low noise amplifier (LNA) from United Monolithic Semiconductors S.A.S. (UMS). The CHA1008-99F is a broadband four-stage monolithic LNA designed for millimeter-wave imaging applications, and is also well-suited for commercial digital radios and wireless local area networks (LANs).
Richardson RFPD Inc. announces availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz. The MMZ25332B is a high efficiency InGaP HBT amplifier that is suitable for 2400 MHz ISM applications.
Planar Monolithics Industries, Inc. introduces new USB style RF & microwave control components and LNA's to 40 GHz. RF & microwave USB style components & LNA’s featuring: 50 MHz to 40 GHz low noise amplifier, 500 MHz to 40 GHz SPDT absorptive switch, and 100 MHz to 40 GHz variable attenuator.
PMI Model No. PE2-4020-9R510R7-2R5-12-12-SFF-VVG is a voltage variable gain, low-noise amplifier that operates over the 9.5 to 10.7 GHz frequency range. This model provides 40 dB of small signal gain with a typical noise figure of 4.0 dB and an OP1dB of +12 dBm.
Custom MMIC is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.
RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5 V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion from 40 to 1008 MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations.
PMI Model PTB-42-1G40G-12-292FF-DC12 is a portable amplifier that operates over the 1.0 to 40.0GHz frequency range. This model provides 40dB of typical gain with an OP1dB of +22dBm typical (1-18GHz) and +18dBm typical (18-40GHz).