RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled multiple leading-edge GaN-based CATV amplifiers, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new CATV amplifiers include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as GaN-based push-pull CATV amplifiers, RFPP2870 and RFCM3080.
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The parts in RFMD’s new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3 V, 50 Ω LTE mobile cellular equipment developed for E-UTRAN/LTE band operation. These parts are developed for 5 to 20 MHz LTE channel bandwidths.
AR RF/Microwave Instrumentation has created single band Models 15S1G6 & 50S1G6. They provide 15 & 50 W of linear output power across the 1 to 6 GHz frequency band with excellent gain flatness. The ability to use one band instead of two means you use less power, and don't require the amplifiers to be switched from one band to the other to perform the required tests.
Hittite Microwave Corp. has recently reduced the list price of their HMC-C072, HMC-C076, HMC-C077, and HMC-C079 GaAs HBT ultra-low phase noise amplifier modules that are ideal for high performance applications in microwave radio, military & space, radar systems, test instrumentation and synthesizer applications from 1.5 to 12 GHz.
The RFCM2680 is the industry's first surface mount GaN power doubler module aimed at CATV networks. Employing a combination of GaN HEMT and GaAs pHEMT technologies, the device provides high output capability from 45 to 1003 MHz with excellent distortion performance.
Hittite Microwave Corp., has launched two new power amplifier products which are ideal for microwave radio, EW, ECM and radar applications to 28 GHz. Also released is a unique wideband LNA which operates from 300 MHz to 20 GHz and is ideal for wideband multi-chip-module and subsystem applications.
AR RF/Microwave Instrumentation has expanded its family of S1G4 amplifier series that cover the 0.8 to 4.2 GHz frequency range. Two new models have been added which offer 525 W and 700 W of RF power, models 525S1G4, and 700S1G4.
The RFAM2790 is an integrated EDGE QAM amplifier module employing a GaAs pHEMT die, a GaAs MESFET die, a 20 dB range variable attenuator, and a power enable feature. It provides high output power, excellent linearity, and superior return loss performance with low noise and optimal reliability.
Mini-Circuits CMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 50 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.