RFMW Ltd. announces design and sales support for the Qorvo TQP9309, a half watt, highly efficient power amplifier covering 700 to 960 MHz (bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28 and 29). The TQP9309 is a fully integrated, 50 ohm module with 32 dB of gain and designed for applications using DFE or DPD. Running from a nominal 5 V supply, the TQP9309 draws ~100 mA and boasts efficiencies as high as 27%.
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Pasternack Enterprises, Inc., an industry-leading manufacturer and supplier of RF, microwave and millimeter wave products, has released their new 2016 RF Product Guide. The company’s new 264 page catalog contains thousands of in-stock products such as a greatly expanded portfolio of RF amplifiers and electromechanical switches, the industry’s largest selection of RF cable assemblies and hundreds of other passive, active and test & measurement components.
RFMW Ltd. announces design and sales support for the Qorvo TQP9326, a half watt, highly efficient power amplifier covering 2.3 to 2.7 GHz (bands 7, 30, 40 and 41). The TQP9326 is a fully integrated, 50 ohm module with 34 dB of gain and designed for applications using DFE or DPD. Running from a nominal 5 V supply, the TQP9326 draws ~115 mA and boasts efficiencies as high as 22%.
Pasternack announces their expanded offering of gallium nitride (GaN) coaxial power amplifiers that includes GaN-based models featuring very high gain levels from 43 to 60 dB across mostly broad frequency bands ranging from 30 MHz to 7.5 GHz. Saturated output power levels range from 10 to 100 W with 20 to 35% power added efficiency. The thermal efficiency of GaN technology enables these assemblies to be integrated into smaller more compact coaxial packages.
RFMW Ltd. announces design and sales support for the Qorvo TQP9321, a half watt, highly efficient power amplifier covering 1.8 to 2.17 GHz (bands 1, 2, 3, 4, 9, 10 and 25). The TQP9321 is a fully integrated, 50 ohm module with 30 dB of gain and designed for applications using DFE or DPD. Running from a nominal 5 V supply, the TQP9321 draws ~100 mA and boasts efficiencies as high as 27%.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new GaN power amplifier from TriQuint / Qorvo. The TGA2239-CP is a 3-stage, 35 W power amplifier operating over the 13.4 to 15.5 GHz band. Fabricated on Qorvo’s production 0.15 µm GaN on SiC technology, this high performance amplifier offers greater than 30 dB small-signal gain with 34% PAE, allowing a system designer to achieve superior performance levels in a cost efficient manner.
RFMW Ltd. announces design and sales support a 2 W saturated output power driver amplifier designed to support HPA implementation from 13 to 18 GHz. The Qorvo TGA2958 is compatible with GaN HPA bias conditions allowing it to run from the same supply as the high power amplifier. The TGA2958, 3-stage driver, has a small signal gain of >25 dB yet draws only 70 mA of CW bias.
Now you can achieve high linear output power up to 350 W over the 0.7 to 6 GHz instantaneous frequency band in one benchtop amplifier. AR RF/Microwave Instrumentation introduces this class A unit that requires only 0 dBm input power to achieve its rated output power and offers low harmonic distortion and excellent noise figure. These instruments as well as our hybrid power modules are available in both Class A and AB configurations for demanding EMC, wireless, or EW applications.
RFMW Ltd. announces design and sales support for an 11 to 17 GHz driver amplifier providing 25 dB of small signal gain and 19 dBm nominal P1dB. The Qorvo TGA2243-SM integrates three amplification stages in a single 4 x 4 mm QFN package with acopper alloy base. Operating from a 6 to 9 V supply, the Qorvo TGA2243-SM draws only 85 mA. Applications for the TGA2243-SM include VSAT, Point-to-Point radio and military radios in the Ku Band.
Pasternack introduces a line of bi-directional amplifiers that are used for sending and receiving radio signals in key applications. The new bi-directional RF amplifiers consist of 2 narrow band models that operate in L-Band (1.35 to 1.39 GHz) and S-Band (2.4 to 2.5 GHz). These designs utilize highly linear Class AB LDMOS semiconductor technology. A general purpose broadband model is also featured which covers 30 MHz to 3 GHz and uses Class A GaAs semiconductors.