Richardson RFPD Inc. announced the availability and full design support capabilities for a new 2 W power amplifier from M/A-COM Technology Solutions. The MAAP-011145 is assembled in a 7 mm surface mount, lead-free cavity package with a temperature compensated integrated power detector operating from 17.65 to 19.75 GHz. The circuit provides 25 dB small signal gain, +43 dBm OIP3, 2W P1dB, +34.5 dBm saturated output power, and bias of 1330 mA at 6 V.
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RFMW Ltd. announces design and sales support a high dynamic range, analog controlled, variable gain amplifier (VGA) operating from 0.7 to 2.8 GHz. The Qorvo TQC9074 offers 30 dB of analog controlled gain variation range and an OIP3 of 41.5 dBm. Applications include remote radio heads and small cell infrastructure. The TQC9074 draws 235 mA from a 5 V supply. Users can access each stage of the module for performance enhancements in their design.
Exodus Advanced Comm. announced the release of a new high power ultra broadband solid-state power amplifier: AMP1062 operates over 6 to 18 GHz instantaneous bandwidth with 40 W minimum in CW and 30 W P1dB typical output power using state of the art Class AB GaN devices. AMP1062 features 46 dB of gain and 32 V DC supply voltage at 14 amp maximum current consumption.
The RM022020 features Qorvo’s patented Spatium™ combining technology to provide unprecedented performance in a general purpose laboratory bench top amplifier for applications that include lab work, test and measurement, load pull, EMI test, and anechoic chambers and test ranges. It is suitable for use a driver/booster amplifier, enabling more power incident upon the device under test (DUT).
Model SBL-5037533060-1212-E1 is a low noise amplifier covering the full waveguide band from 50 to 75 GHz with small signal gain of 30 dB and 6.0 dB noise figure. The amplifier also exhibits +10 dBm typical P-1 dB output powers. It draws about 120 mA current from a single DC power supply in the range of +8 to +12 volts.
The ACA2431 is a highly linear, high output power integrated RF amplifier designed for CATV headends and HFC distribution systems. The IC consists of two parallel amplifiers that are optimized for exceptionally low distortion, high output power, and high crash point. A GaN output stage is incorporated to minimize the operating (bias) current and provides high gain over the 50 to 1218 MHz CATV downstream band.
Richardson RFPD Inc. announced the availability and full design support capabilities for a discrete GaN on SiC HEMT from TriQuint / Qorvo. The 30 W (P3dB) T2G4003532 operates from DC to 3.5 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
Richardson RFPD Inc. announced the availability and full design support capabilities for a wideband amplifier from M/A-COM Technology Solutions. The MAAM-011109-DIE is an easy-to-use, wideband amplifier that operates from DC to 50 GHz and features 15 dB of gain, +21 dBm P1dB (+15 dBm at 40 GHz), with 22 dB of reverse isolation, 15 dB return loss, and OIP3 of +29 dBm at 5V/190mA with VG1 = -0.4V.
RFMW Ltd. announces design and sales support for the Qorvo TGA2239 high power MMIC amplifier offering 35 W of saturated output power for Ku-band applications. The Qorvo TGA2239 operates over 13 to 15.5 GHz with power added efficiency of >32% and small signal gain of 29.5 dB. Processed using GaN on SiC technology, the TGA2239 draws 900 mA from a 22 V supply. Applications include Radar, data links and satellite communications.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new GaAs power amplifier from TriQuint / Qorvo. The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It operates from 16 to 18.5 GHz and typically provides greater than 1 W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain.