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RFMW Ltd. announces design and sales support for Qorvo’s TQP9224, a ¼ W power amplifier for small cell radios. Spanning the 2300 to 2400 MHz frequency band, this internally matched amplifier covers band 30 and 40 wireless infrastructure applications.The TQP9224 has 38 dB of gain and -50 dBc ACLR at 24 dBm. Recommended supply voltage is 4.5 V with 237 mA current draw but it can be operated at 5 V if higher power is needed.
Custom MMIC added a new category to their rapidly expanding standard product offerings. Custom MMIC’s GaAs MMIC low phase noise amplifier family offers previously unattained phase noise performance. Phase noise is a critical requirement which defines the performance level of most radars and communications systems. The five product family achieves phase noise performance as low as -165 dBc/Hz at 10 kHz offset.
Richardson RFPD Inc. announced the availability and full design support capabilities for two GaN on SiC RF transistors from Qorvo. The discrete GaN on SiC HEMTs operate from DC to 4 GHz. The QPD1009 is a 15 W, 50 V device with an output power level of 17 W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10 W, 50 V QPD1010 features an output power of 11 W at 2 GHz and a linear gain of 24.7 dB at 2 GHz.
Custom MMIC has added a distributed amplifier to its market leading portfolio of broadrange distributed amplifiers. The ultrawideband DC to 22 GHz performance of the CMD240P4 distributed amplifier is accompanied with a low noise figure of 2.2 dB and +28 dBm IP3. The performance levels of this device make it suited for an extremely wide range of applications, including electronic warfare, SIGINT, military radar and instrumentation.
EMM5077VU - Power GaAs, C to Ka band power amplifier MMICs (Packages.) The EMM5077VU is a power amplifier MMIC that contains a two stage amplifier, internally matched, for standard communications band in 3.4 to 5.0 GHz frequency range. SEI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50 V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. 0.9 GHz
Sumitomo GaN-HEMT SGN1214-220H-R offers high power, high efficiency, ease of matching and greater consistency covering 1.2 to 1.4 GHz for L-band radar applications with 50 V operation. The low thermal resistance allows use of long pulse up to 5 msec pulse width with duty of 10%.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-Band amplifiers with 50 V operation, and gives you higher gain. This device targets applications that are driver stage and final stage of micro cell for base transceiver stations.
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RFMW Ltd. announces design and sales support for Qorvo’s TQP9224, a ¼ W power amplifier for small cell radios. Spanning the 2300 to 2400 MHz frequency band, this internally matched amplifier covers band 30 and 40 wireless infrastructure applications.The TQP9224 has 38 dB of gain and -50 dBc ACLR at 24 dBm. Recommended supply voltage is 4.5 V with 237 mA current draw but it can be operated at 5 V if higher power is needed.
Custom MMIC added a new category to their rapidly expanding standard product offerings. Custom MMIC’s GaAs MMIC low phase noise amplifier family offers previously unattained phase noise performance. Phase noise is a critical requirement which defines the performance level of most radars and communications systems. The five product family achieves phase noise performance as low as -165 dBc/Hz at 10 kHz offset.
Custom MMIC has added a distributed amplifier to its market leading portfolio of broadrange distributed amplifiers. The ultrawideband DC to 22 GHz performance of the CMD240P4 distributed amplifier is accompanied with a low noise figure of 2.2 dB and +28 dBm IP3. The performance levels of this device make it suited for an extremely wide range of applications, including electronic warfare, SIGINT, military radar and instrumentation.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50 V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. 0.9 GHz
Sumitomo GaN-HEMT SGN1214-220H-R offers high power, high efficiency, ease of matching and greater consistency covering 1.2 to 1.4 GHz for L-band radar applications with 50 V operation. The low thermal resistance allows use of long pulse up to 5 msec pulse width with duty of 10%.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-Band amplifiers with 50 V operation, and gives you higher gain. This device targets applications that are driver stage and final stage of micro cell for base transceiver stations.