Amplifiers and Oscillators

A-Series Amplifiers

A-Series MockupPMI's A-Series amplifiers are available in low noise, medium power and lost cost designs and operate over the 10 MHz to 40 GHz frequency range. These new models feature form fit & function design, low noise figure, operating temp: -54° to +85°C, unconditionally stable over temperature, excellent group delay and phase linearity, field replaceable SMA connectors, and more.


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Wideband Balanced Driver Amplifier: CMD243

Custom MMIC_CMD243_PR ImageCustom MMIC has added an amplifier to its expanding product offerings, the CMD243 26 to 35 GHz low noise driver amplifier. The CMD243 is a wideband self-biasing GaAs MMIC balanced driver amplifier that offers 15.5 dB of gain with an output P1dB compression point of +21 dBm. The amplifier operates from a single 5 volt supply and draws just 90 mA typical. The balanced design provides good VSWR matching, along with improved stability and gain flatness.


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Two High Performance BroadRange Distributed Amps: CMD240 / CMD241

Custom MMIC CMD240_241_PRCustom MMIC has added two BroadRangeTM distributed amplifiers to their portfolio, the DC-22 GHz CMD240 and 2 to 22 GHz CMD241. Both products feature a unique positive gain slope, which eases the design of broadband systems by eliminating equalizer circuits or added amplifiers to compensate for the typical negative gain slope of most amplifiers. Both amplifiers are 50 ohm matched designs.


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High-Linearity Quad MOSFET Mixer: PE4152

Peregrine_PE4152z_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new UltraCMOS® quad MOSFET mixer from Peregrine Semiconductor Corporation. The PE4152 is a high-linearity quad MOSFET mixer with an integrated local oscillator (LO) buffer amplifier. The LO amplifier allows for LO input drive levels of less than 0 dBm to produce third-order intercept point (IIP3) values similar to a quad MOSFET array driven with a +15 dBm LO drive.


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Dual Matched-Pair LNA Targets Balanced Amps: TQL9066

Qorvo TQL9066RFMW Ltd. announces design and sales support for a dual, low noise amplifier (LNA) from Qorvo. The TQL9066 incorporates two, matched, E-pHEMT LNAs enabling balanced amplifier configurations with noise figure rated at 0.6 dB. Applicable for the first stage in receivers, the Qorvo TQL9066 finds homes in BTS transceivers, L-Band radios and tower mounted amplifiers operating from 0.05 to 1.5 GHz.


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Build Your Own Amplifier Web Tool

AtlantecRF-LogoAtlanTecRF, a leading global RF and microwave components and equipment manufacturer, launched an easy to use ‘build your own amplifier’ web tool. The tool is designed to take customers through a series of questions to help them easily specify and customize their amplifier requirements. This tool takes away a lot of the information exchange between parties. ensuring all necessary data required to customize an amplifier is gathered upfront before product specifications are begun.


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Two Linear Power Amplifiers: MAAP-011161 / MAAP-011193

MAAP-011161MACOM Technology Solutions Inc. announced the MAAP-011161 and the MAAP-011193, two packaged linear power amplifiers designed specifically for use in point to point radios in cellular backhaul applications. The MAAP-011161 and MAAP-011193 operate over 7.1 to 7.9 GHz and 7.7 to 8.5 GHz, respectively, and are intended for 7 and 8 GHz radio applications. The MAAP-011161 and MAAP-011193 have a third-order intercept point (OIP3) of 46.5 dBm.


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Balanced 3-Stage GaAs Amplifier: MAAP-011199

MAAP-011199Richardson RFPD Inc. announced the availability and full design support capabilities for a new power amplifier from M/A-COM Technology Solutions. The MAAP-011199 is a balanced 3-stage gallium arsenide (GaAs) pHEMT MMIC power amplifier that operates from 80 to 100 GHz and typically provides +24 dBm of saturated output power. The power amplifier’s balanced architecture results in excellent input and output match to 50Ω across the entire 80 to 100 GHz frequency band.


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S-Band GaN Amplifier: TGA2813-SM

TGA2813-SMRFMW Ltd. announces design and sales support for the Qorvo TGA2813-SM, a 3.1 to 3.6 GHz GaN amplifier providing 100W of saturated output power. With 24 dB of large signal gain and power added efficiency of 56%, the TGA2813-SM is ideal for commercial and military radar systems. The small, surface mount package measures 7 x 9 mm and is housed in a plastic QFN. Bias requirements are only 300 mA from a 30 V supply.


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Two X-band GaN Power Amplifiers: TGA2622-SM and TGA2624-SM

Qorvo_TGA2622-SM_TGA2624-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two X-band GaN power amplifiers from Qorvo. The TGA2622-SM and TGA2624-SM operate from 9 to 10 GHz and are offered in 7 mm x 7 mm air-cavity, laminate-based QFN packages. For both devices, the RF ports are internally DC blocked and matched to 50 ohms, enabling simple system integration.


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