Amplifiers and Oscillators

Monolithic Amplifier: LVA-123+

DQ849LVA-123+ (RoHS compliant) is an advanced ultra-wideband amplifier fabricated using GaAs HBT technol­ogy and offers excellent gain flatness over a broad frequency range. In addition, the LVA-123+ has good input and output return loss over this frequency range without the need for external matching components. Lead finish is tin-silver over nickel. It has repeatable performance from lot to lot and is enclosed in a 3 x 3 mm 8-lead package for very good thermal performance.


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GaN Power Amplifier: TGA2218-SM

TGA2218-SMRFMW Ltd. announces design and sales support for a GaN power amplifier. The Qorvo TGA2218-SM offers 12 W of saturated output power from 13.4 to 16.5 GHz. Small signal gain is >28 dB while large signal gain is >23 dB. The TGA2218-SM draws 225 mA from a 28 V supply with 29% power added efficiency (PAE). Serving Commercial VSAT, Military Satcom, Radar and Data Link applications, the TGA2218-SM comes in a 5.5 x4.5 mm, air-cavity QFN package.


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High Gain, High Linearity Power Amplifiers: SKY66185-11

SKY66185-11RFMW Ltd. announces design and sales support for high gain, high linearity power amplifiers designed for ‘small cell’ applications. The Skyworks SKY66185-11 provides 38 dB of gain for LTE radios operating in the 851 to 894 MHz frequency range (B5, B6, B18, B19, B26, B27). Designed for high linearity at elevated temperatures, the SKY66185-11 supports outdoor applications where ambient temperatures range from -40 to +85 degrees C. Typical ACLR performance is -50 dBc at 23 dBm.


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GaN Power Amplifier: QPA2237

Qorvo QPA2237RFMW Ltd. announces design and sales support for a GaN power amplifier. The Qorvo QPA2237 offers 10 W of saturated output power from 30 MHz to 2.5 GHz. Small signal gain is >18.5 dB while large signal gain is >13 dB. The QPA2237 draws 360 mA from a 32 V supply with 48% power added efficiency (PAE). Serving electronic warfare (EW), radar and communications markets, the QPA2237 comes in a 4 x 4 mm, plastic overmold QFN package.


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Solid-State RF Amplifier Module: AMP1071

AMP1071 sideExodus introduces the AMP1071, a solid-state RF amplifier module covering the entire ultra-wide 2.0 to 20.0 GHz frequency range instantaneously at 20 W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32 VDC source at less than 10 A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage.


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High Gain, High Linearity Power Amplifiers: SKY66186-11

SKY66186-11RFMW Ltd. announces design and sales support for high gain, high linearity power amplifiers designed for ‘small cell’ applications. The Skyworks SKY66186-11 provides 38 dB of gain for LTE radios operating in the 728 to 768 MHz frequency range (B12, B13, B14, B17). Designed for high linearity at elevated temperatures, the SKY66186-11 supports outdoor applications where ambient temperatures range from -40 to +85 degrees C.


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Two 4 W Power Amplifiers: MAAP-011161 and MAAP-011193

MACOM_MAAP-011161_and_93_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two 4 W power amplifiers from MACOM Technology Solutions Inc. The MAAP-011161 and MAAP-011193 are packaged linear PAs that operate from 7.1 to 7.9 GHz and 7.7 to 8.5 GHz, respectively. The devices offer OIP3 of +46.5 dBm and greater than +35.5 dBm Psat. The MAAP-011161 offers 22 dB small signal gain, while the MAAP-011193 provides 20 dB small signal gain.


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1 W Linear Amplifier: TQP9113

TQP9113RFMW Ltd. announces a 1 W linear amplifier targeting small cell base stations, repeaters and boosters. Operating from 1.8 to 2.7 GHz, the Qorvo TQP9113 provides up to 30.6 dBm P1dB with >27 dB of gain. With excellent linearity, OIP3 is measured at 41 dBm. The TQP9113 draws only 215 mA from a 5 V supply and integrates inter-stage matching and input matching with a shutdown mode for a less complicated design implementation and increased link range.


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Wideband Gain Block Amplifier: LTC6433-15

LTC6433-15Linear Technology announces the LTC6433-15, a wideband 15 dB gain block amplifier offering outstanding linearity of 47 dBm OIP3 (output third order intercept) and 3.22 dB noise figure at 150 MHz. The amplifier has excellent OP1dB (output 1dB compression point) of 19.2 dBm. The LTC6433-15 is uniquely different from other gain block amplifiers that are typically built using GaAs or pHEMT processes. These FET technologies have high 1/f noise corners on the order of 20 to 30 MHz.


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Wideband GaAs MMIC Distributed Amplifier: CMD238

Custom MMIC_CMD238_PR ImageCustom MMIC has the added CMD238 2 to 20 GHz amplifier to its market leading BroadRange Distributed Amplifier™ portfolio. The CMD238 is a wideband GaAs MMIC distributed amplifier ideally designed for wideband applications requiring high linearity in a small die size. From 2 to 20 GHz, this amplifier delivers 14 dB of gain with an output P1dB of +26 dBm, an output IP3 of +34 dBm, and a 2nd harmonic level of -33 dBc.


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