SEI' s GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are driver stage and final stage of micro cell for base transceiver station. 2.65 GHz
- High Voltage Operation : VDS=50V
- High Power : 46dBm (typ.) @ Psat
- High Efficiency: 60%(typ.) @ Psat
- Power Gain : 18.5dB(typ.) @ f=2.65GHz
- Proven Reliability
