Sum 2 z2d_photo-lSEI' s GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are driver stage and final stage of micro cell for base transceiver station.  2.65 GHz

  • High Voltage Operation : VDS=50V
  • High Power : 46dBm (typ.) @ Psat
  • High Efficiency: 60%(typ.) @ Psat
  • Power Gain : 18.5dB(typ.) @ f=2.65GHz
  • Proven Reliability

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